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参数资料
| 型号： | MT46V32M8P-75ELIT:G |
| 元件分类： | DRAM |
| 英文描述： | 64M X 8 DDR DRAM, 0.75 ns, PDSO66 |
| 封装： | 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 |
| 文件页数： | 35/93页 |
| 文件大小： | 3632K |
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PDF: 09005aef80768abb/Source: 09005aef82a95a3a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
38
2003 Micron Technology, Inc. All rights reserved.
256Mb: x4, x8, x16 DDR SDRAM
Electrical Specifications – DC and AC
38c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 14 on
38d. The driver pull-up current variation within nominal limits of voltage and temper-
ature is expected, but not guaranteed, to lie within the inner bounding lines of the
V-I curve of Figure 14 on page 38.
38e. The full ratio variation of MAX to MIN pull-up and pull-down current should be
between 0.71 and 1.4 for drain-to-source voltages from 0.1V to 1.0V at the same
voltage and temperature.
38f. The full ratio variation of the nominal pull-up to pull-down current should be
unity ±10% for device drain-to-source voltages from 0.1V to 1.0V.
Figure 13:
Full Drive Pull-Down Characteristics
Figure 14:
Full Drive Pull-Up Characteristics
39. Reduced output drive curves:
39a. The full driver pull-down current variation from MIN to MAX process; tempera-
ture and voltage will lie within the outer bounding lines of the V-I curve of
39b. The driver pull-down current variation, within nominal voltage and temperature
limits, is expected, but not guaranteed, to lie within the inner bounding lines of
the V-I curve of Figure 15 on page 39.
39c. The full driver pull-up current variation from MIN to MAX process; temperature
and voltage will lie within the outer bounding lines of the V-I curve of Figure 16.
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VOUT (V)
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0.0
0.5
1.0
1.5
2.0
2.5
IOUT
(mA)
VDDQ - VOUT (V)
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| MT47H64M16BT-3ELIT:A | 64M X 16 DDR DRAM, 0.45 ns, PBGA92 |
| MT47H64M8B6-3ELAT:D | DDR DRAM, PBGA60 |
| MT48H32M16LFCJ-8 | 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT46V32M8T66ADC1 | 制造商:Micron Technology Inc 功能描述:32MX8 DDR SDRAM DIE-COM COMMERCIAL 2.5V - Trays |
| MT46V32M8TG-5B/G | 制造商:Micron Technology Inc 功能描述:DRAM Chip DDR SDRAM 256M-Bit 32Mx8 2.6V 66-Pin TSOP Tray |
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