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| 型号： | NOIH2SM1000S-HHC |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/67页 |
| 文件大小： | 0K |
| 描述： | IC SPACE IMAGE SENSOR 84-JLCC |
| 标准包装： | 1 |
| 系列： | HAS2 |
| 象素大小： | 18µm x 18µm |
| 有源象素阵列： | 1024H x 1024V |
| 电源电压： | 3.3V |
| 类型： | CMOS 成像 |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
| 其它名称： | CYIH1SM1000AA-HHCS CYIH1SM1000AA-HHCS-ND |
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NOIH2SM1000A
Total Dose Radiation Test
Application
The total dose radiation test must be performed in
accordance with the requirements of ESCC Basic
Specification 22900.
Parameter Drift Values
The allowable parameter drift values after total dose
irradiation are listed in Table 22 on page 19 . The parameters
shown are valid after a total dose of 42 KRad and
168 h / 100 ° C annealing.
Bias Conditions
Continuous bias must be applied during irradiation testing
as shown in Figure 49 on page 59 and next ones of this
specification.
Electrical and Electro-optical Measurements
The parameters to be measured, prior to, during and on
completion of the irradiation are listed in Table 27 on
page 24 of this specification. Only devices that meet the
specification in Table 18 on page 14 of this specification
must be included in the test samples.
Lot Acceptance and Screening
This section describes the Lot Acceptance Testing (LAT)
and screening on the HAS2 FM devices. All tests on device
level must be performed on screened devices (see Table 9 on
page 7)
Wafer Lot Acceptance
This is the acceptance of the silicon wafer lot. This must
be done on every wafer lot that is used for the assembly of
flight models.
Table 6.
Test
Wafer processing
data review
SEM
Total dose test
Endurance test
Test Method
PID
ESCC 21400
ESCC 22900
MIL-STD-883 Method 1005
Number of Devices
NA
4 naked dies
3 devices
6 devices
Test Condition
NA
NA
42 krad, not to exceed
3.6 krad/hr
2000h at +125 ° C
Test Location
ON Semiconductor
Test house
Test house by
ON Semiconductor
Test house
Before and after total dose test and endurance test:
? Electrical measurements before and after at high, low,
and room temperature. See Table 18 on page 14, Table
19 on page 15 and Table 20 on page 16 of this
specification.
? Visual inspection before and after
? Detailed electro-optical measurements before and after
Glass Lot Acceptance
Transmission and reflectance curves that are delivered
Table 15. Three glass lids are chosen randomly from the lot
and measured in detail. The results are compared with
Figure 5 on page 26.
Package Lot Acceptance
? Five packages are chosen randomly from the lot and
measured in detail. The results are compared with
Figure 4 on page 25.
? A solderability test is covered in the assembly lot
acceptance tests (Table 7)
with each lot must be compared with the specifications in
Table 7. ASSEMBLY LOT ACCEPTANCE
Number of
Test
Test Method
Devices
Test Condition
Test Location
Special assembly house in
process control
Assembly House
Bond strength test
Assembly house geometrical data
review
Solder ability
MIL-STD-883 method 2011
Review
MIL-STD883, method 2003
2
All
3
D
D
Assembly House
CY
Test House
Terminal strength
Marking permanence
MIL-STD 883, method 2004
ESCC 24800
Geometrical measurements
PID
All
CY
Temperature cycling
MIL-STD 883, method 1010
5
Condition B
Test House
50 cycles
–55 ° C / +125 ° C
Moisture resistance
JEDEC Std. Method A101-B
240 h at 85 ° C / 85%
Test House
http://onsemi.com
6
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