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参数资料
| 型号： | NOIH2SM1000S-HHC |
| 厂商： | ON Semiconductor |
| 文件页数： | 64/67页 |
| 文件大小： | 0K |
| 描述： | IC SPACE IMAGE SENSOR 84-JLCC |
| 标准包装： | 1 |
| 系列： | HAS2 |
| 象素大小： | 18µm x 18µm |
| 有源象素阵列： | 1024H x 1024V |
| 电源电压： | 3.3V |
| 类型： | CMOS 成像 |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
| 其它名称： | CYIH1SM1000AA-HHCS CYIH1SM1000AA-HHCS-ND |
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NOIH2SM1000A
Question:
The HAS2 appears more restrictive compared to the
flexibility of STAR-1000. For example, the application note
says, “repeated use of pixel re-addressing (register X1)
potentially injects offset-noise into any windows that
overlap in Y-coordinates.” Does this mean I cannot address
each pixel along a line individually? I cannot read out every
other pixel, or every second, fifth, or tenth and all pixels
must be read out in a line. Are there any options?
Answer:
You can start reading at any X or Y position. Remember
that there is an analog pipeline on the pixel data. When
reading two pixels of the same line closer than the analog
pipe, the second pixel is addressed only after the first pixel.
Therefore, the second pixel is read by a new SyncX, when
yo address it the second time.
As a result, there is a risk of a deviated value. Probably
some deviated offset on the pixel value.
Question:
For NDR/CDS mode, there is parasitic exposure in the
suggested algorithm. Can I do this algorithm instead?
1. Reset Row X
2. Start integration timer
3. Readout Row X
4. Reset Row X+1
5. Readout Row X+1
6. Reset Row X+2
7. Readout Row X+2
8. (repeat to region of interest)
9. (wait for integration timer completion)
10. Readout Row X
11. (wait for time to reset a row)
12. Readout Row X+1
13. (wait for time to reset a row)
14. Readout Row X+2
15. (wait for time to reset a row)
16. (repeat to region of interest)
Answer:
This algorithm can be used.
Question:
Our target application requires that we operate with the
sun in our field of view. From initial calculations, this means
that we can have a sun spot on the sensor around 50 pixels
in diameter, over-exposed by a factor of ~1000 against other
target spots.
? What is the role of the anti-blooming ground pin
(GND_AB) and how does it impact the sensor
behavior?
? Is the anti-blooming capability sufficient to prevent any
additional “recovery” time of the sensor?
? What pixel to pixel crosstalk behavior can be expected
around the sun spot? 9.8% of the full well (Table 27 on
page 24)?
Answer:
When a pixel is saturated and even goes to negative
voltage levels, it is not suitable for lower electro potential
level to attract new photon-electrons. So the extra
photo-electrons can now go to nearby pixels more easily
than to the pixel where the electrons are generated. This is
visible in the image as blooming. The anti-blooming method
involves keeping the photo-diode at an attractive
electro-potential that still attract new electrons. This is done
by holding the gate of the reset transistor higher then ground
level.
The ‘row_select’ line that selects a specific row of the
pixel array is a digital signal that swaps between
‘GND_DIG’ and ‘VDD_DIG’. The ‘row_reset’ line that
resets a specific row of pixels uses the same drivers as the
‘row_select’ line but the lower voltage level is not
‘GND_DIG’ but ‘GND_AB’. So the lower level of gate of
the pixel reset transistor can be set by adapting the voltage
level of ‘GND_AB’.
It is recommended not to go higher than 1 V with the
voltage level of ‘GND_AB’ than 1 V. The digital circuits of
the sensor should still see it as a digital ‘0’. Some second
order effect of keeping GND_AB higher than ground:
? The swing of row_reset is now lower. This means less
cross-talk to the photo-diode and higher dark-level.
Probably you don’t see much changes if you read the
sensor in dual sampling. Both the signal and the dark
reference changes in level, so the subtraction is still the
same. But you use the photo-diode on a slightly higher
voltage level. Therefore, the pixel cap can be a little
lower. (nonlinear behavior of the cap of a diode).
? The swing of the diode is also lowered, but probably
only the part of the swing that was not read-out anyway.
It is very difficult to get any quantification of the
anti-blooming effect. The best way of figuring is just trying
it. The anti-blooming function is not part of the
characterization of the sensor.
http://onsemi.com
64
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