- 您现在的位置：买卖IC网 > Datasheet目录484 > NOIH2SM1000S-HHC (ON Semiconductor)IC SPACE IMAGE SENSOR 84-JLCC Datasheet资料下载
参数资料
| 型号： | NOIH2SM1000S-HHC |
| 厂商： | ON Semiconductor |
| 文件页数： | 66/67页 |
| 文件大小： | 0K |
| 描述： | IC SPACE IMAGE SENSOR 84-JLCC |
| 标准包装： | 1 |
| 系列： | HAS2 |
| 象素大小： | 18µm x 18µm |
| 有源象素阵列： | 1024H x 1024V |
| 电源电压： | 3.3V |
| 类型： | CMOS 成像 |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
| 其它名称： | CYIH1SM1000AA-HHCS CYIH1SM1000AA-HHCS-ND |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页当前第66页第67页
NOIH2SM1000A
Question:
Will pixel-to-pixel crosstalk only appear if a pixel is fully
saturated? Or will it also appear if for instance the pixel is
only as half it’s full well capacity. If it does happen even if
the pixel is not fully saturated do you know to what extent
it will happen - will it also be the same extent as shown in
Pixel ? to ? Pixel Cross Talk on page 35 of your data sheet?
Will pixel-to-pixel crosstalk only lead to charge leaking
from a pixel with higher signal to a pixel with low signal or
vice versa?
Answer:
The pixel-to-pixel crosstalk shown in Pixel ? to ? Pixel
Cross Talk on page 35 is cross-talk caused by floating
generated electrons that are not yet captured by any
photo-diode. So it has nothing to do with the actual level on
the accumulated photo-diodes. Only when the photo-diode
is really totally saturated, the floating electrons can behave
differently. The saturated photo-diode cannot capture more
electrons, so incoming electrons are not kept. The generated
electrons will be captured by neighboring photo-diodes that
are not yet completely saturated (or recombined).
So cross-talk as measured in Pixel ? to ? Pixel Cross Talk on
page 35 goes both from pixel with higher to lower signal
levels and vice versa. It doesn’t matter as long they are not
fully saturated. Note that the anti-blooming ground can keep
the pixel out of a completely saturation state.
Question:
The test results after proton beam are not as expected. To
interpret the results we want to know what the thickness is
of the epitaxial layer. Or more in detail the thickness of the
active area of the photo diode.
Answer:
EPI thickness: 5 m m, the nwell is about 1 m m deep.
Question:
How large is the active area compared to the overall pixel?
Almost the whole photo-sensitive area is active area.
Answer:
96% of the whole pixel is active area. Everything expect
the transistors and nwell, is p-doped
Question:
Is there a spice model available for the radiation hard pixel
used in the HAS device?
Answer:
Question:
What is the penetration depth of photons in the HAS2
pixel versus the spectral range? Doe we have such graphs
available?
Answer:
This is theory. We have penetration versus spectral range
but this depends on the actual doping levels of the substrate.
So it is never actual measured.
Question:
How does the MTF behave with increasing wavelength?
Is there an MTF graph available versus spectral range?
Answer:
You can expect a large decrease in MTF when using
higher wavelengths. To known how it behaves on the HAS2,
new MTF measurements are needed.
Question:
In chapter 6.2 of the actual data sheet it is suggested to use
one regulator for all digital supply pins together, one
regulator for the sensor core analog supplies together, and
one regulator for the ADC analog supply. Against it the test
circuit in chapter 7.3 uses 5 different supply voltages
(VDDD, VDDA, VPIX, VadcA, VadcD).
With the first information I decided to use 3 regulators:
One for VDD_ANA + VDD_PIX, one for VDD_DIG +
VDD_ADC_DIG and one only for VDD_ADC_ANA.
Moreover I use two grounds (analog and digital). Sadly with
this configuration I have some problems in Window-Mode.
Every 2nd line of the first lines of a window overshoot there.
The more lines are sampled the lower is that effect. After
may be 20 to 30 lines the effect exists no longer. In an other
PCB I use a separate regulator for VDD_PIX instead for
VDD_ADC_ANA (VDD_ADC_ANA is connected to
VDD_ANA) and everything works fine. Is that the
problem?
Answer:
I expect that the peak currents of VPIX make the power
regulator that you use unstable. This is no problem as long
the VPIX isn’t use by other parts of the sensor.
So it is normal that when VPIX has its own regulator,
nothing strange becomes visible in the image. But probably,
VPIX is still not stable. However, the double sampling (both
the signal and the black level are affected by the voltage level
of VPIX) hide the problem for you.
No. The models that are used are just non-radiation hard
models.
ADDENDUM
AN-APS-FF-WO-06-001 (v1.): Application note on HAS readout methods
http://onsemi.com
66
相关PDF资料 |
PDF描述 |
|---|---|
| NOII5SM1300A-QDC | SENSOR IMAGE MONO CMOS 84-LCC |
| NOIL1SC4000A-GDC | IC IMAGE SENSOR 4MP 127-PGA |
| NOIL1SE3000A-GDC | IC IMAGE SENSOR 3MP 369-PGA |
| NOIL1SM0300A-WWC | IC IMAGE SENSOR LUPA300 48LLC |
| NOIL2SC1300A-GDC | IC IMAGE SENSOR LUPA1300 168PGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NOII4SM1300A-QDC | 功能描述:SENSOR IMAGE MONO CMOS 84-LCC RoHS:否 类别:传感器，转换器 >> 图像，相机 系列:- 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
| NOII4SM1300A-QWC | 功能描述:SENSOR IMAGE MONO CMOS 84-LCC RoHS:否 类别:传感器，转换器 >> 图像，相机 系列:- 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
| NOII4SM6600A-QDC | 功能描述:图像传感器和彩色传感器 IBIS4-6600 MONO LLC68 RoHS:否 制造商:Avago Technologies 类型:Color Sensors 工作电源电压:2.5 V 封装 / 箱体: 图象大小: 颜色读出:Color 最大工作温度:+ 70 C 最小工作温度:- 25 C 封装:Reel |
| NOII5FM1300A-QDC | 功能描述:SENSOR IMAGE 1.3MP CMOS 84-LCC RoHS:否 类别:传感器，转换器 >> 图像，相机 系列:- 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
| NOII5SC1300A-QDC | 功能描述:SENSOR IMAGE COLOR CMOS 84-LCC RoHS:否 类别:传感器，转换器 >> 图像，相机 系列:- 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
发布紧急采购，3分钟左右您将得到回复。