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参数资料
| 型号： | TSPC106AVGS66CG |
| 厂商： | E2V TECHNOLOGIES PLC |
| 元件分类： | 总线控制器 |
| 英文描述： | PCI BUS CONTROLLER, CBGA303 |
| 封装： | 21 X 25 MM, 3.84 MM HEIGHT, 1.27 MM PITCH, CICGA-303 |
| 文件页数： | 4/41页 |
| 文件大小： | 581K |
| 代理商： | TSPC106AVGS66CG |
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12
TSPC106A
2102C–HIREL–01/05
L2 Cache/Multiple
Processor Interface
Signals
The TSPC106 provides support for either an internal L2 cache controller or an external
L2 cache controller and/or additional 60x processors.
Internal L2 Controller Signals
Table 3 lists the interface signals for the internal L2 controller and provides a brief
description of their functions. The internal L2 controller supports either burst SRAMs or
asynchronous SRAMs. Some of the signals perform different functions depending on
the SRAM configuration.
TSIZ[0:2]
Transfer size
3
O
Specifies the data transfer size for the 60x bus transaction.
I
Specifies the data transfer size for the 60x bus transaction.
TT[0:4]
Transfer type
5
O
Specifies the type of 60x bus transfer in progress.
I
Specifies the type of 60x bus transfer in progress.
WT
Write-through
1
I/O
Indicates that an access is write-through.
XATS
Extended address
transfer start
1I
Indicates that the 60x has started a direct-store access (using the
extended transfer protocol). Since direct-store accesses are not
supported by the TSPC106, the TSPC106 automatically asserts when
TEA and XATS are asserted (provided TEA is enabled).
Table 2. 60x Processor Interface Signals (Continued)
Signal
Signal Name
Number of
Pins
I/O
Signal Description
Table 3. Internal L2 Controller Signals
Signal
Signal Name
Number of
Pins
I/O
Signal Description
ADS
DALE
BRL2
Address strobe
1
O
For a burst SRAM configuration, indicates to the burst SRAM that the
address is valid to be latched
BA0
BR3
Burst address 0
1
I/O
For an asynchronous SRAM configuration, indicates bit 0 of the burst
address counter
BA1
BAA
BGL2
Burst address 1
1
O
For an asynchronous SRAM configuration, indicates bit 1 of the burst
address counter
BAA
BA1
BGL2
Bus address
advance
1
O
For a burst SRAM configuration, indicates that the burst RAMs should
increment their internal addresses
DALE
ADS
BRL2
Data address latch
enable
1
O
For an asynchronous SRAM configuration, indicates that the external
address latch should latch the current 60x bus address
DCS
BG3
Data RAM chip
select
1
O
Enables the L2 data RAMs for a read or write operation
DIRTY_IN
BR1
Dirty in
1
I
Indicates that the selected L2 cache line is modified. The polarity of
DIRTY_IN is programmable
DIRTY_OUT
BG1
Dirty out
1
O
Indicates that the L2 cache line should be marked as modified. The
polarity of DIRTY_OUT is programmable
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