参数资料
型号: M2V56S30ATP-6
元件分类: DRAM
英文描述: 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: 0.400 X 0.875 INCH, TSOP2-54
文件页数: 4/51页
文件大小: 430K
代理商: M2V56S30ATP-6
12
MITSUBISHI ELECTRIC
May '02
MITSUBISHI LSIs
SDRAM (Rev.1.41)
Single Data Rate
M2V56S20/ 30/ 40 AKT
256M Synchronous DRAM
M2V56S20/ 30/ 40 ATP
FUNCTION TRUTH TABLE (continued)
Current State
/CS
/RAS
/CAS
/WE
Address
Command
Action
RE-
FRESHING
H
X
DESEL
NOP (Idle after tRFC)
L
H
X
NOP
NOP (Idle after tRFC)
L
H
L
X
TBST
ILLEGAL
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
H
X
REFA
ILLEGAL
L
Op-Code,
Mode-Add
MRS
ILLEGAL
MODE
REGISTER
SETTING
H
X
DESEL
NOP (Idle after tRSC)
L
H
X
NOP
NOP (Idle after tRSC)
L
H
L
X
TBST
ILLEGAL
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
H
X
REFA
ILLEGAL
L
Op-Code,
Mode-Add
MRS
ILLEGAL
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending
on the state of that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto-Precharge in page 26
7. Refer to Write with Auto-Precharge in page 25
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
相关PDF资料
PDF描述
M30-6000206 2 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
M30-6000406 4 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
M30-6001106 11 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
M30-6011006 20 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
M30-6011506 30 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SURFACE MOUNT
相关代理商/技术参数
参数描述
M2V56S30ATP-7 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30ATP-8 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30TP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30TP-6 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM
M2V56S30TP-7 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM