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参数资料
| 型号： | M2V56S30ATP-6 |
| 元件分类： | DRAM |
| 英文描述： | 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| 封装： | 0.400 X 0.875 INCH, TSOP2-54 |
| 文件页数： | 7/51页 |
| 文件大小： | 430K |
| 代理商： | M2V56S30ATP-6 |
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15
MITSUBISHI ELECTRIC
May '02
MITSUBISHI LSIs
SDRAM (Rev.1.41)
Single Data Rate
M2V56S20/ 30/ 40 AKT
256M Synchronous DRAM
M2V56S20/ 30/ 40 ATP
POWER ON SEQUENCE
MODE REGISTER
R: Reserved for Future Use
LATENCY
MODE
CL
/CAS LATENCY
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
R
2
3
R
/CS
/RAS
/CAS
/WE
BA0,1 A12-A0
CLK
V
BURST
LENGTH
BL
BT=0
BT=1
1
2
4
8
R
Full Page
1
2
4
8
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BA0 BA1 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3 A2
A1
A0
0
SW
0
LTMODE
BT
BL
Burst Write
Single Write
SW
0
1
Before starting normal operation, the following power on sequence is necessary to prevent a
SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP or DESEL condition at
the inputs.
2. Maintain stable power, stable clock, and NOP or DESEL input conditions for a minimum of 100us.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 2 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
Burst Length, Burst Type, /CAS Latency and Write Mode can be programmed by
setting the mode register (MRS). The mode register stores these data
until the next MRS command, which may be issued when all banks are in
idle state. After tRSC from a MRS command, the SDRAM is ready for
new command.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M2V56S30ATP-7 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S30ATP-8 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S30TP | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S30TP-6 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
| M2V56S30TP-7 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:256M Synchronous DRAM |
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