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参数资料
| 型号： | M393B5273CH0-CK0 |
| 元件分类： | DRAM |
| 英文描述： | 512M X 72 MULTI DEVICE DRAM MODULE, 0.225 ns, DMA240 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 |
| 文件页数： | 37/58页 |
| 文件大小： | 1982K |
| 代理商： | M393B5273CH0-CK0 |
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- 35 -
datasheet
DDR3 SDRAM
Rev. 1.0
Registered DIMM
[ Table 18 ] Timing Parameters by Speed Bin (Cont.)
Speed
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Units
NOTE
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
Command and Address Timing
DLL locking time
tDLLK
512
-
512
-
512
-
512
-
nCK
internal READ Command to PRECHARGE Command
delay
tRTP
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns)
-
e
Delay from start of internal write transaction to internal
read command
tWTR
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns)
-
e,18
WRITE recovery time
tWR
15
-
15
-
15
-
15
-
ns
e,18
Mode Register Set command cycle time
tMRD
4
-
4
-
4
-
4
-
nCK
Mode Register Set command update delay
tMOD
max
(12nCK,15n
s)
-
max
(12nCK,15n
s)
-
max
(12nCK,15n
s)
-
max
(12nCK,15ns
)
-
CAS# to CAS# command delay
tCCD
4
-
4
-
4
-
4
-
nCK
Auto precharge write recovery + precharge time
tDAL(min)
WR + roundup (tRP / tCK(AVG))
nCK
Multi-Purpose Register Recovery Time
tMPRR
1
-
1
-
1
-
1
-
nCK
22
ACTIVE to PRECHARGE command period
tRAS
See “Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin” on page 40
ns
e
ACTIVE to ACTIVE command period for 1KB page
size
tRRD
max
(4nCK,10ns)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,6ns)
-
max
(4nCK,6ns)
-
e
ACTIVE to ACTIVE command period for 2KB page
size
tRRD
max
(4nCK,10ns)
-
max
(4nCK,10ns)
-
max
(4nCK,7.5ns
)
-
max
(4nCK,7.5ns)
-
e
Four activate window for 1KB page size
tFAW
40
-
37.5
-
30
-
30
-
ns
e
Four activate window for 2KB page size
tFAW
50
-
50
-
45
-
40
-
ns
e
Command and Address setup time to CK, CK refer-
enced to VIH(AC) / VIL(AC) levels
tIS(base)
200
-
125
-
65
-
45
-
ps
b,16
Command and Address hold time from CK, CK refer-
enced to VIH(AC) / VIL(AC) levels
tIH(base)
275
-
200
-
140
-
120
-
ps
b,16
Command and Address setup time to CK, CK refer-
enced to VIH(AC) / VIL(AC) levels
tIS(base)
AC150
200 + 150
-
125 + 150
-
65+125
-
45+125
-
ps
b,16,27
Control & Address Input pulse width for each input
tIPW
900
-
780
-
620
-
560
-
ps
28
Calibration Timing
Power-up and RESET calibration time
tZQinitI
512
-
512
-
512
-
512
-
nCK
Normal operation Full calibration time
tZQoper
256
-
256
-
256
-
256
-
nCK
Normal operation short calibration time
tZQCS
64
-
64
-
64
-
64
-
nCK
23
Reset Timing
Exit Reset from CKE HIGH to a valid command
tXPR
max(5nCK,
tRFC +
10ns)
-
max(5nCK,
tRFC +
10ns)
-
max(5nCK,
tRFC +
10ns)
-
max(5nCK,
tRFC + 10ns)
-
Self Refresh Timing
Exit Self Refresh to commands not requiring a locked
DLL
tXS
max(5nCK,t
RFC + 10ns)
-
max(5nCK,t
RFC + 10ns)
-
max(5nCK,t
RFC + 10ns)
-
max(5nCK,tR
FC + 10ns)
-
Exit Self Refresh to commands requiring a locked DLL
tXSDLL
tDLLK(min)
-
tDLLK(min)
-
tDLLK(min)
-
tDLLK(min)
-
nCK
Minimum CKE low width for Self refresh entry to exit
timing
tCKESR
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
tCKE(min) +
1tCK
-
Valid Clock Requirement after Self Refresh Entry
(SRE) or Power-Down Entry (PDE)
tCKSRE
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
Valid Clock Requirement before Self Refresh Exit
(SRX) or Power-Down Exit (PDX) or Reset Exit
tCKSRX
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
max(5nCK,
10ns)
-
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