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参数资料
| 型号： | M393B5273CH0-CK0 |
| 元件分类： | DRAM |
| 英文描述： | 512M X 72 MULTI DEVICE DRAM MODULE, 0.225 ns, DMA240 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 |
| 文件页数： | 45/58页 |
| 文件大小： | 1982K |
| 代理商： | M393B5273CH0-CK0 |
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datasheet
DDR3 SDRAM
Rev. 1.0
Registered DIMM
- 5 -
1. DDR3 Registered DIMM Ordering Information
NOTE :
- "##" - F8/H9/K0
- F8(1066Mbps 7-7-7) / H9(1333Mbps 9-9-9) / K0(1600Mbps 11-11-11)
2. Key Features
JEDEC standard 1.5V ± 0.075V Power Supply
VDDQ = 1.5V ± 0.075V
400MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin, 667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 6,7,8,9,10,11
Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066), 7(DDR3-1333) and 8(DDR3-1600)
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or
write [either On the fly using A12 or MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE ≤ 95°C
Asynchronous Reset
3. Address Configuration
Part Number
Density
Organization
Component Composition
Number of
Rank
Height
M393B5773CH0-CF8/H9/K0
2GB
256Mx72
256Mx8(K4B2G0846C-HC##)*9
1
30mm
M393B5273CH0-CF8/H9/K0
4GB
512Mx72
256Mx8(K4B2G0846C-HC##)*18
2
30mm
M393B5270CH0-CF8/H9/K0
4GB
512Mx72
512Mx4(K4B2G0446C-HC##)*18
1
30mm
M393B1K70CH0-CF8/H9/K0
8GB
1Gx72
512Mx4(K4B2G0446C-HC##)*36
2
30mm
M393B1K73CH0-CF8/H9
8GB
1Gx72
256Mx8(K4B2G0846C-HC##)*36
4
30mm
M393B2K70CM0-CF8/H9
16GB
2Gx72
DDP 1Gx4(K4B4G0446C-MC##)*36
4
30mm
Speed
DDR3-800
DDR3-1066
DDR3-1333
DDR3-1600
Unit
6-6-6
7-7-7
9-9-9
11-11-11
tCK(min)
2.5
1.875
1.5
1.25
ns
CAS Latency
6
7
9
11
nCK
tRCD(min)
15
13.125
13.5
13.75
ns
tRP(min)
15
13.125
13.5
13.75
ns
tRAS(min)
37.5
36
35
ns
tRC(min)
52.5
50.625
49.5
48.75
ns
Organization
Row Address
Column Address
Bank Address
Auto Precharge
512Mx4(2Gb) based Module
A0-A14
A0-A9, A11
BA0-BA2
A10/AP
256Mx8(2Gb) based Module
A0-A14
A0-A9
BA0-BA2
A10/AP
1Gx4(4Gb DDP) based Module
A0-A14
A0-A9, A11
BA0-BA2
A10/AP
相关PDF资料 |
PDF描述 |
|---|---|
| M393B5773CH0-CK0 | 256M X 72 MULTI DEVICE DRAM MODULE, 0.225 ns, DMA240 |
| M3950/1529A012 | TOGGLE SWITCH, 3PDT, LATCHED, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
| M83731/2327D110 | TOGGLE SWITCH, 3PDT, MOMENTARY, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
| M3950/1726A110 | TOGGLE SWITCH, 3PDT, LATCHED, 4A, 28VDC, THROUGH HOLE-STRAIGHT |
| M3E-R21ZQXFREQ | CRYSTAL OSCILLATOR, CLOCK, 1.5 MHz - 155.52 MHz, PECL OUTPUT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M393B5273CH0-CK004 | 制造商:Samsung 功能描述:4GBYTE REGISTERED DIMM, DDR3-1600 - Trays |
| M393B5273DH-CH9E8 | 制造商:Samsung Semiconductor 功能描述:4GB 2RX8 PC3-8500R-07-00-B0-D1 - Trays |
| M393B5670EH1 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:DDR3 SDRAM Memory |
| M393B5670EH1-CF801 | 制造商:Samsung Semiconductor 功能描述:2GB DDR3 REGISTERED DIMM, 1066MHZ, - Trays |
| M393B5670EH1-CH904 | 制造商:Samsung Semiconductor 功能描述:2GBYTE REGISTERED DIMM,DDR3-1333 - Trays |
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