参数资料
型号: MCP6N11T-100E/SN
厂商: Microchip Technology
文件页数: 3/50页
文件大小: 0K
描述: IC AMP INSTR RRIO 35MHZ 8SOIC
标准包装: 3,300
放大器类型: 仪表
电路数: 1
输出类型: 满摆幅
转换速率: 6 V/µs
增益带宽积: 35MHz
电流 - 输入偏压: 10pA
电压 - 输入偏移: 350µV
电流 - 电源: 800µA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
2011 Microchip Technology Inc.
DS25073A-page 11
MCP6N11
Figure 1-9 shows VED vs. VDM, as well as a linear fit
line (VED_LIN) based on VE and gE. The op amp is in
standard conditions (
ΔVOUT =0, etc.). VDM is swept
from VDML to VDMH.
FIGURE 1-9:
Differential Input Error vs.
Differential Input Voltage.
Based on the measured VED data, we obtain the
following linear fit:
EQUATION 1-11:
Note that the VE value measured here is not as
accurate as the one obtained in Section 1.5.1 “Input
The remaining error (
ΔVED) is described by the
Differential Mode Non-Linearity spec:
EQUATION 1-12:
V1
V3
VED, VED_LIN (V)
VDM (V)
VDML
VDMH
0
V2
VED_LIN
VED
ΔVED
Where:
V
ED_LIN
1g
E
+
()V
E
g
EVDM
+
=
g
E
V
3
V
1
V
DMH
V
DML
-----------------------------------
1
=
V
E
V
2
1g
E
+
----------------
=
Where:
INL
DM
max
ΔV
ED
V
DMH
V
DML
-----------------------------------
=
ΔV
ED
V
ED
V
ED_LIN
=
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