参数资料
型号: MCP6N11T-100E/SN
厂商: Microchip Technology
文件页数: 8/50页
文件大小: 0K
描述: IC AMP INSTR RRIO 35MHZ 8SOIC
标准包装: 3,300
放大器类型: 仪表
电路数: 1
输出类型: 满摆幅
转换速率: 6 V/µs
增益带宽积: 35MHz
电流 - 输入偏压: 10pA
电压 - 输入偏移: 350µV
电流 - 电源: 800µA
电流 - 输出 / 通道: 30mA
电压 - 电源,单路/双路(±): 1.8 V ~ 5.5 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
MCP6N11
DS25073A-page 16
2011 Microchip Technology Inc.
Note: Unless otherwise indicated, TA = +25°C, VDD = 1.8V to 5.5V, VSS = GND, EN/CAL =VDD, VCM = VDD/2, VDM =0V,
VREF =VDD/2, VL =VDD/2, RL = 10 kΩ to VL, CL = 60 pF and GDM = GMIN; see Figure 1-6 and Figure 1-7.
FIGURE 2-17:
Normalized DC Open-Loop
Gain vs. Ambient Temperature.
FIGURE 2-18:
The MCP6N11 Shows No
Phase Reversal vs. Common Mode Voltage.
FIGURE 2-19:
Normalized Differential
Mode Voltage Range vs. Ambient Temperature.
FIGURE 2-20:
Normalized Differential Input
Error vs. Differential Voltage, with GMIN =1.
FIGURE 2-21:
Normalized Differential Input
Error vs. Differential Voltage, with
GMIN = 2 to 100.
FIGURE 2-22:
The MCP6N11 Shows No
Phase Reversal vs. Differential Voltage, with
VDD =5.5V.
105
110
a
in;
95
100
o
op
G
a
)
V
DD = 5.5V
V
DD = 1.8V
85
90
95
O
pen-L
o
M
IN
(dB
)
80
85
d
DC
O
A
OL
/G
M
70
75
m
alize
d
A
G
MIN = 1 to 10
G
= 100
60
65
Nor
m
G
MIN = 100
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
5.5
6.0
Representative Part
V
DD = 5.5V
40
4.5
5.0
(V)
DD
G
DM = 100
30
3.5
4.0
o
ltage
G
DM
100
G
DM =
1
2.0
2.5
3.0
tput
V
o
V
IM = -0.20V
1.0
1.5
2.0
Ou
t
V
IM = VDD + 0.15V
0.0
0.5
-1.0
-0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Non-inverting Input Voltage; V
IP (V)
3.8
4.0
u
t
V
)
1 Wafer Lot
G
MINVDMH = -GMINVDML
3.4
3.6
ial
Inp
u
V
DMH
(V
RTO
30
3.2
3.4
fferent
i
e
;G
MIN
V
2.8
3.0
z
ed
Di
f
Rang
e
2.4
2.6
o
rmali
z
o
ltage
2.0
2.2
N
o
V
o
Note: For G
MIN = 1,
V
DMH = minimum of plot value and VDD
-50
-25
0
25
50
75
100
125
Axis Title
-2
-1
0
1
2
3
4
5
ized
Differential
Input
ror;
G
MIN
V
ED
(mV)
Representative Part
V
ED = (VOUT –VREF)/GDM –VDM
G
MIN = 1
RTO
V
DD = 1.8V
V
DD = 5.5V
-5
-4
-3
2
-5
-4
-3
-2
-1
012345
Normal
Er
r
Normalized Differential Input Voltage;
G
MINVDM (V)
4
5
p
ut
Representative Part
V
ED = (VOUT – VREF)/GDM – VDM
2
3
tial
In
p
mV)
V
ED
(V
OUT
V
REF)/GDM
V
DM
G
MIN = 2 to 100
RTO
0
1
ifferen
t
M
IN
V
ED
(
-2
-1
0
ized
D
i
ror;
G
M
-4
-3
2
N
ormal
Er
r
-5
4
-5
-4
-3
-2
-1
0
1
2
3
4
5
N
-5
-4
-3
-2
-1
0
1
2
3
4
5
Normalized Differential Input Voltage;
G
MINVDM (V)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
tput
V
o
ltage
(V)
Representative Part
V
DD = 5.5V
V
REF = (VDD –GDMVDM)/2
0.0
0.5
1.0
1.5
-7 -6 -5 -4 -3 -2 -1
01234567
Ou
t
Differential Input Voltage (V)
G
MIN = 1
G
MIN = 2
G
MIN = 5
G
MIN = 10
G
MIN = 100
相关PDF资料
PDF描述
MCP6V11T-E/OT IC OPAMP SGL ZERO DRIFT SOT23-5
MCP6V27T-E/SN IC OPAMP DUAL AUTO-ZERO 8SOIC
MCP6V31UT-E/LT IC OPAMP SGL ZERO DRIFT SC70-5
ME50101VX-000U-A99 FAN BRUSHLESS 12VDC 50X50X10MM
MIC6211BM5 TR IC OP AMP GEN PURPOSE SOT23-5
相关代理商/技术参数
参数描述
MCP6S21-I/MS 功能描述:特殊用途放大器 1-Chan. 12 MHz SPI RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比(最小值): 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel
MCP6S21-I/P 功能描述:特殊用途放大器 1-Chan. 12 MHz SPI RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比(最小值): 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel
MCP6S21-I/P 制造商:Microchip Technology Inc 功能描述:AMP PROGRAMMABLE GAIN 1 CH 6S21
MCP6S21-I/SN 功能描述:特殊用途放大器 1-Chan. 12 MHz SPI RoHS:否 制造商:Texas Instruments 通道数量:Single 共模抑制比(最小值): 输入补偿电压: 工作电源电压:3 V to 5.5 V 电源电流:5 mA 最大功率耗散: 最大工作温度:+ 70 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-20 封装:Reel
MCP6S21-I/SN 制造商:Microchip Technology Inc 功能描述:Operational Amplifier (Op-Amp) IC