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参数资料
型号： MT28F320A18
厂商： Micron Technology, Inc.
英文描述： FLASH MEMORY
中文描述： 闪存
文件页数： 12/37页
文件大小： 558K
代理商： MT28F320A18
2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
12
Read Query
The read query mode outputs common flash inter-
face (CFI) data when the device is read (see Table 12).
Two bus cycles are required for this operation. It is pos-
sible to access the query by writing the read query
command code 98h on DQ0–DQ7. Control signals CE#
and OE# must be at a logic LOW level (V
IL
), and WE#
and RP# must be at logic HIGH level (V
IH
) to read data
from the query. The CFI data structure contains infor-
mation such as block size, density, command set, and
electrical specifications. To return to read array mode,
write the read array command code FFh on DQ0–DQ7.
Read Status Register
The status register is read by entering the command
code 70h on DQ0–DQ7. Two bus cycles are required for
this operation: one to enter the command code and a
second to read the status register. In a READ cycle, the
register data is updated on the falling edge of OE# or
CE#, whichever occurs last.
PROGRAMMING OPERATIONS
There are two CSM commands for programming:
PROGRAM SETUP and ALTERNATE PROGRAM SETUP
(see Table 3).
After the desired command code is entered (10h or
40h command code on DQ0–DQ7), the WSM takes
over and correctly sequences the device to complete
the PROGRAM operation. The WRITE operation may
be monitored through the status register (see the Sta-
tus Register section). During this time, the CSM will
only respond to a PROGRAM SUSPEND command
until the PROGRAM operation has been completed,
after which time all commands to the CSM become
valid again. The PROGRAM operation can be sus-
pended by issuing a PROGRAM SUSPEND command
(B0h). Once the WSM reaches the suspend state, it
allows the CSM to respond only to READ ARRAY, READ
STATUS REGISTER, READ PROTECTION CONFIGU-
RATION, READ QUERY, and PROGRAM RESUME. Dur-
ing the PROGRAM SUSPEND operation, array data
should be read from an address other than the one
being programmed. To resume the PROGRAM opera-
tion, a PROGRAM RESUME command (D0h) must be
issued to cause the CSM to clear the suspend state pre-
viously set (see Figure 4 for programming operation
and Figure 5 for program suspend and program
resume).
During programming, V
PP
must remain in the
appropriate V
PP
voltage range as shown in the Recom-
mended Operating Conditions table.
ERASE OPERATIONS
An ERASE operation must be used to initialize all
bits in an array block to “1”. After BLOCK ERASE CON-
FIRM is issued, the CSM responds only to an ERASE
SUSPEND command until the WSM completes its task.
Block erasure inside the memory array sets all bits
within the address block to logic "1". Erase is accom-
plished only by blocks; data at single address locations
within the array cannot be erased individually. The
block to be erased is selected by using any valid
address within that block. Block erasure is initiated by
a command sequence to the CSM: BLOCK ERASE
SETUP (20h) followed by BLOCK ERASE CONFIRM
(D0h) (see Figure 6). A two-command erase sequence
protects against accidental erasure of memory con-
tents.
When the BLOCK ERASE CONFIRM command is
complete, the WSM automatically executes a sequence
of events to complete the block erasure. During this
sequence, the block is programmed with logic "0",
data is verified, all bits in the block are erased, and
finally verification is performed to ensure that all bits
are correctly erased. Monitoring the ERASE operation
is possible through the status register (see the Status
Register section).
During the execution of an ERASE operation the
ERASE SUSPEND command (B0h) can be entered to
direct the WSM to suspend the ERASE operation. Once
the WSM has reached the suspend state, it allows the
CSM to respond only to the READ ARRAY, READ STA-
TUS REGISTER, READ QUERY, READ CHIP PROTEC-
TION
CONFIGURATION,
PROGRAM/ERASE RESUME and LOCK SETUP (see
the Block Locking section). During the ERASE SUS-
PEND operation, array data must be read from a block
other than the one being erased. To resume the ERASE
operation, an ERASE RESUME command (D0h) must
be issued to cause the CSM to clear the suspend state
previously set (see Figure 7). It is also possible that an
ERASE can be suspended and a write to another block
can be initiated. After the completion of a write, an
erase can be resumed by writing an ERASE RESUME
command.
PROGRAM
SETUP
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MT28F320J3BS-11 GMET 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869
MT28F320J3BS-11 GMET TR 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘
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