参数资料
型号: MT28F320A18
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 22/37页
文件大小: 558K
代理商: MT28F320A18
2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
22
Figure 6: BLOCK ERASE Flowchart
Notes: 1.
Full status register check can be done after each block or after a sequence of blocks.
2.
SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3.
SR5 is cleared only by the CLEAR STATUS REGISTER command in cases where multiple blocks are erased before
full status is checked.
YES
NO
Full Status Register
Check (optional)
NO
YES
ERASE
SUSPEND
SR 7 = 1
Start
BLOCK ERASE Passed
V
PP
Range Error
BLOCK ERASE Failed
FULL STATUS REGISTER CHECK FLOW
Read Status Register
Bits
ERASE
SUSPEND Loop
1
YES
NO
SR1 = 0
YES
NO
YES
NO
BLOCK ERASE
Completed
Read Status Register
Bits
ERASE Attempted
on a Locked Block
SR3 = 0
SR5 = 0
Issue ERASE SETUP
Command and
Block Address
Issue BLOCK ERASE
CONFIRM Command
and Block Address
BUS
OPERATION COMMAND
WRITE
COMMENTS
Data = 20h
Block Addr = Address
within block to be
erased
Data = D0h
Block Addr = Address
within block to be
erased
Status register data
Toggle OE# or CE# to
update status register.
Check SR7
1 = Ready, 0 = Busy
WRITE ERASE
SETUP
WRITE
ERASE
READ
Standby
Repeat for subsequent blocks.
Write FFh after the last BLOCK ERASE operation to return
the device to read array mode.
BUS
OPERATION COMMAND
Standby
COMMENTS
Check SR1
1 = Detect locked
block
Check SR3
2
1 = Detect Vpp block
Check SR4 and SR5
1 = Block erase
command error
Check SR5
3
1 = Block erase error
Standby
Standby
Standby
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