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参数资料
| 型号： | MT28F320A18 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 闪存 |
| 文件页数： | 7/37页 |
| 文件大小： | 558K |
| 代理商： | MT28F320A18 |
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2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
7
COMMAND STATE MACHINE
Commands are issued to the command state
machine (CSM) using standard microprocessor write
timings. The CSM acts as an interface between exter-
nal microprocessors and the internal write state
machine (WSM). The available commands are listed in
Table 3, their definitions are given in Table 4 and their
descriptions in Table 5. Program and erase algorithms
are automated by an on-chip WSM. Table 6 shows the
CSM transition states.
Once a valid PROGRAM/ERASE command is
entered, the WSM executes the appropriate algorithm,
which generates the necessary timing signals to con-
trol the device internally and accomplish the
requested operation. A command is valid only if the
exact sequence of WRITE cycles is completed. After the
WSM completes its task, the WSM status bit (SR7) (see
Table 8) is set to a logic HIGH level (1), allowing the
CSM to respond to the full command set again.
OPERATIONS
Device operations are selected by entering a stan-
dard JEDEC 8-bit command code with conventional
microprocessor timings into an on-chip CSM through
I/Os DQ0–DQ7. The number of bus cycles required to
activate a command is typically one or two. The first
operation is always a WRITE. Control signals CE# and
WE# must be at a logic LOW level (V
IL
), and OE# and
RP# must be at logic HIGH (V
IH
). The second opera-
tion, when needed, can be a WRITE or a READ
depending upon the command. During a READ opera-
tion, control signals CE# and OE# must be at a logic
LOW level (Vil), and WE# and RP# must be at logic
HIGH (V
IH
).
Table 7 illustrates the bus operations for all the
modes: write, read, reset, standby, and output disable.
When the device is powered up, internal reset cir-
cuitry initializes the chip to a read array mode of oper-
ation. Changing the mode of operation requires that a
command code be entered into the CSM. An on-chip
status register is available. The status register allows
the monitoring of the progress of various operations
that can take place on a memory. The status register is
interrogated by entering a READ STATUS REGISTER
command onto the CSM (cycle 1) and reading the reg-
ister data on I/Os DQ0–DQ7 (cycle 2). Status register
bits SR0–SR7 correspond to DQ0–DQ7 (see Table 8).
Command Definition
Once a specific command code has been entered,
the WSM executes an internal algorithm, generating
the necessary timing signals to program, erase, and
verify data. See Table 4 for the CSM command defini-
tions and data for each of the bus cycles.
Table 3:
Command State Machine Codes For
Device Mode Selection
COMMAND DQ0–DQ7
40h/10h
20h
50h
60h
70h
90h
98h
B0h
C0h
D0h
FFh
CODE ON DEVICE MODE
Program setup/alternate program setup
Block erase setup
Clear status register
Protection configuration setup
Read status register
Read protection configuration register
Read query
Program/erase suspend
Protection register program/lock
Program/erase resume – erase confirm
Read array
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| MT28F320J3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Q-FLASHTM MEMORY |
| MT28F320J3BS-11 ET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 ET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT28F320J3BS-11 GMET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 GMET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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