参数资料
型号: MT28F320A18
厂商: Micron Technology, Inc.
英文描述: FLASH MEMORY
中文描述: 闪存
文件页数: 27/37页
文件大小: 558K
代理商: MT28F320A18
2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
27
ABSOLUTE MAXIMUM RATINGS*
Voltage to Any Ball Except Vcc and Vpp
with Respect to Vss.............................-0.5V to +2.45V
Vpp Voltage (for BLOCK ERASE and
PROGRAM with Respect to Vss) ........-0.5V to +13.5V
Vcc and VccQ Supply Voltage
with Respect to Vss.............................-0.3V to +2.45V
Output Short Circuit Current ...............................100mA
Operating Temperature Range................-40
o
C to +85
o
C
Storage Temperature Range ..................-55
o
C to +125
o
C
Soldering Cycle...........................................260
o
C for 10s
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sections
of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods
may affect reliability.
Notes: 1.
V
PP
= V
PP
2
is a maximum of 10 cumulative hours.
Figure 9: AC Input/Output Reference Waveform
Figure 10: Output Load Circuit
RECOMMENDED OPERATING CONDITIONS
PARAMETER/CONDITION
SYMBOL
MIN
-40
MAX
+85
UNITS
NOTES
Operating temperature
t
A
V
CC
V
CC
Q
1
V
PP
1
V
PP
2
V
PP
1
V
PP
2
o
C
V
V
V
V
V
CC
supply voltage
I/O supply voltage (V
CC
= 1.65V–1.95V)
Supply voltage, when used as logic control
V
PP
in-factory programming voltage
Block erase cycling
1.65
1.65
0.9
11.4
100,000
1.95
1.95
1.95
12.6
100
V
PP
= V
PP
1
V
PP
= V
PP
2
Cycles
Cycles
1
Output
Test Points
Input
V
CC
V
SS
AC test inputs are driven at V
CC
for a logic 1 and V
SS
for a logic 0. Input timing begins at V
CC
/2,
and output timing ends
at V
CC
Q/2. Input rise and fall times (10% to 90%) < 5ns.
V
CC
Q/2
V
CC
/2
I/O
14.5K
30pF
V
CC
V
SS
14.5K
相关PDF资料
PDF描述
MT2D18 1 Meg x 8 DRAM Module(5V,1M x 8 动态RAM模块)
MT46V16M4 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组,双数据速率同步动态RAM)
MT46V4M16 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组,双数据速率同步动态RAM)
MT46V8M8 2 Meg x 8 x 4 banks DDR SDRAM(2 M x 8 x 4组,双数据速率同步动态RAM)
MT46V2M32LG DOUBLE DATA RATE DDR SDRAM
相关代理商/技术参数
参数描述
MT28F320J3 制造商:MICRON 制造商全称:Micron Technology 功能描述:Q-FLASHTM MEMORY
MT28F320J3BS-11 ET 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
MT28F320J3BS-11 ET TR 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA(7x7) 包装:托盘
MT28F320J3BS-11 GMET 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M(8Mx32) 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA(8x13) 包装:托盘 其它名称:Q2841869
MT28F320J3BS-11 GMET TR 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M(1M x 8,512K x 16) 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA(7x7) 包装:托盘