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参数资料
| 型号： | MT28F320A18 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 闪存 |
| 文件页数： | 19/37页 |
| 文件大小： | 558K |
| 代理商： | MT28F320A18 |
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2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
19
Table 8:
Status Register Bit Definition
WSMS
7
ESS
6
ES
5
PS
4
V
PP
S
3
PSS
2
BLS
1
R
0
STATUS BIT
#
SR7
STATUS REGISTER BIT
DESCRIPTION
WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
ERASE SUSPEND STATUS (ESS)
1 = BLOCK ERASE Suspended
0 = BLOCK ERASE in Progress/Completed
ERASE STATUS (ES)
1 = Error in Block Erasure
0 = Successful BLOCK ERASE
PROGRAM STATUS (PS)
1 = Error in PROGRAM
0 = Successful PROGRAM
V
PP
STATUS (V
PP
S)
1 = V
PP
Low Detect, Operation Abort
0 = V
PP
= OK
Check write state machine bit first to determine word program
or block erase completion, before checking program or erase
status bits.
When ERASE SUSPEND is issued, WSM halts execution and sets
both WSMS and ESS bits to “1.” ESS bit remains set to “1” until
an ERASE RESUME command is issued.
When this bit is set to “1,” WSM has applied the maximum
number of erase pulses to the block and is still unable to verify
successful block erasure.
When this bit is set to “1,” WSM has attempted but failed to
program a word.
SR6
SR5
SR4
SR3
The V
PP
status bit does not provide continuous indication of the
V
PP
level. The WSM interrogates the V
PP
level only after the
program or erase command sequences have been entered. The
WSM informs the system if V
PP
< 0.9V. The V
PP
level is also
checked before the PROGRAM/ERASE operation is verified by
the WSM.
When PROGRAM SUSPEND is issued, WSM halts execution and
sets both WSMS and PSS bits to “1.” PSS bit remains set to “1”
until a PROGRAM RESUME command is issued.
If a PROGRAM or ERASE operation is attempted to one of the
locked blocks, this is set by the WSM. The operation specified is
aborted and the device is returned to read status mode.
SR2
PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
BLOCK LOCK STATUS (BLS)
1 = PROGRAM/ERASE Attempted on a
Locked Block; Operation Aborted
0 = No operation to locked blocks
RESERVED FOR FUTURE ENHANCEMENTS
SR1
SR0
This bit is reserved for future enhancements.
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| MT28F320J3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Q-FLASHTM MEMORY |
| MT28F320J3BS-11 ET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 ET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT28F320J3BS-11 GMET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 GMET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
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