- 您现在的位置：买卖IC网 > PDF目录385639 > MT28F320A18 (Micron Technology, Inc.) FLASH MEMORY PDF资料下载
参数资料
| 型号： | MT28F320A18 |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | FLASH MEMORY |
| 中文描述： | 闪存 |
| 文件页数： | 26/37页 |
| 文件大小： | 558K |
| 代理商： | MT28F320A18 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
2 MEG x 16
1.8V ENHANCED+ BOOT BLOCK FLASH MEMORY
PRELIMINARY
2 Meg x 16, 1.8V Enhanced+ Boot Block Flash Memory
MT28F320A18_3.fm - Rev. 3, Pub. 9/2002
2002, Micron Technology Inc.
26
READ CYCLE
Addresses can be accessed in a random order with
an access time given by
t
AA = 70ns.
When CE# and OE# are LOW, the data is placed on
the data bus and the processor can read the data.
STANDBY MODE
I
CC
supply current is reduced by applying a logic
HIGH level on CE# and RP# to enter the standby mode.
In the standby mode, the outputs are placed in High-Z.
Applying a CMOS logic HIGH level on CE# and RP#
reduces the current to I
CC2
(MAX). If the device is dese-
lected during an ERASE operation or during program-
ming, the device continues to draw current until the
operation is complete.
AUTOMATIC POWER SAVE MODE (APS)
Substantial power savings are realized during peri-
ods when the array is not being read and the device is
in the active mode. During this time, the device
switches to the automatic power saving mode. When
the device switches to this mode, I
CC
is reduced to
I
CC2
. The low level of power is maintained until
another operation is initiated. In this mode, the I/O
pins retain the data from the last memory address read
until a new address is initiated. This mode is entered
automatically if no address or control signal toggles.
POWER-UP SEQUENCE
The following power-up sequence is recommended
to properly initialize internal chip operations:
At power-up, RST# should be kept at V
IL
for 2μ
S
after V
CC
reaches V
CC
(MIN).
VccQ should not come up before Vcc.
V
PP
should be kept at V
IL
to maximize data integ-
rity.
When the power-up sequence is completed, RST#
should be brought to V
IH
. To ensure proper power-up,
the rise time of RST# (10%–90%) should be < 10μ
S
.
相关PDF资料 |
PDF描述 |
|---|---|
| MT2D18 | 1 Meg x 8 DRAM Module(5V，1M x 8 动态RAM模块) |
| MT46V16M4 | 4 Meg x 4 x 4 banks DDR SDRAM(4 M x 4 x 4组，双数据速率同步动态RAM) |
| MT46V4M16 | 1 Meg x 16 x 4 banks DDR SDRAM(1M x 16 x 4组，双数据速率同步动态RAM) |
| MT46V8M8 | 2 Meg x 8 x 4 banks DDR SDRAM(2 M x 8 x 4组，双数据速率同步动态RAM) |
| MT46V2M32LG | DOUBLE DATA RATE DDR SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT28F320J3 | 制造商:MICRON 制造商全称:Micron Technology 功能描述:Q-FLASHTM MEMORY |
| MT28F320J3BS-11 ET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 ET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| MT28F320J3BS-11 GMET | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| MT28F320J3BS-11 GMET TR | 功能描述:IC FLASH 32MBIT 110NS 64FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
发布紧急采购，3分钟左右您将得到回复。