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参数资料
| 型号： | MT48H8M16LFB4-75 IT:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 11/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1530-6 |
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128Mb: x16 Mobile SDRAM
Mode Register Definition
and the latency is programmed to two clocks, the DQs will start driving after T1 and the
data will be valid by T2, as shown in Figure 5. Table 5 indicates the operating frequencies
at which each CL setting can be used.
Reserved states should not be used as unknown operation or incompatibility with future
versions may result.
Figure 5:
CAS Latency
T0
T1
T2
T3
CLK
COMMAND
READ
NOP
NOP
DQ
CL = 2
t LZ
tAC
tOH
D OUT
T0
T1
T2
T3
T4
CLK
COMMAND
READ
NOP
NOP
NOP
DQ
t LZ
tOH
D OUT
tAC
CL = 3
DON’T CARE
UNDEFINED
Operating Mode
The normal operating mode is selected by setting M7 and M8 to zero; the other combi-
nations of values for M7 and M8 are reserved for future use. The programmed BL applies
to both read and write bursts.
Reserved states should not be used because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
When M9 = 0, BL programmed via M0–M2 applies to both READ and WRITE bursts;
when M9 = 1, the programmed BL applies to READ bursts, but write accesses are single-
location accesses.
Extended Mode Register
The extended mode register controls the functions beyond those controlled by the mode
register. These additional functions are special features of the mobile device. They
include temperature-compensated self refresh (TCSR) control, PASR, and output drive
strength.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
11
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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