参数资料
型号: MT48H8M16LFB4-75 IT:K TR
厂商: Micron Technology Inc
文件页数: 20/63页
文件大小: 0K
描述: IC SDRAM 128MBIT 133MHZ 54VFBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 128M(8Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 标准包装
其它名称: 557-1530-6
128Mb: x16 Mobile SDRAM
Operation
Figure 10:
Consecutive READ Bursts
T0
T1
T2
T3
T4
T5
T6
CLK
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
X = 1 cycle
ADDRESS
BANK,
COL n
BANK,
COL b
DQ
D OUT
n
D OUT
n +1
D OUT
n +2
D OUT
n +3
D OUT
b
CL = 2
T0
T1
T2
T3
T4
T5
T6
T7
CLK
COMMAND
READ
NOP
NOP
NOP
READ
NOP
NOP
NOP
X = 2 cycles
ADDRESS
BANK,
COL n
BANK,
COL b
DQ
D OUT
n
D OUT
n +1
D OUT
n +2
D OUT
n +3
D OUT
b
CL = 3
TRANSITIONING DATA
DON’T CARE
Notes:
1. Each READ command may be to any bank. DQM is LOW.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
20
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
MTC100-JA2-P34 CONTACT INSERT PIN
MX841BE IC CONVERTER WHITE LED 8-SOIC
MXHV9910BTR IC LED DRIVER HIGH BRIGHT 8-SOIC
MXN12FB12F MOTOR BRUSHED DC 12V 2922RPM
MXN13FB08B1 MOTOR BRUSHED DC 8V 4714RPM
相关代理商/技术参数
参数描述
MT48H8M16LFB4-8 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘