参数资料
型号: MT48H8M16LFB4-75 IT:K TR
厂商: Micron Technology Inc
文件页数: 7/63页
文件大小: 0K
描述: IC SDRAM 128MBIT 133MHZ 54VFBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 128M(8Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 标准包装
其它名称: 557-1530-6
128Mb: x16 Mobile SDRAM
General Description
Table 3:
Ball Descriptions
54-BALL FBGA
F2
SYMBOL
CLK
TYPE
Input
DESCRIPTION
Clock: CLK is driven by the system clock. All SDRAM input signals are
sampled on the positive edge of CLK. CLK also increments the internal
burst counter and controls the output registers.
F3
CKE
Input
Clock enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE power-down and SELF
REFRESH operation (all banks idle), ACTIVE power-down (row active in
any bank), deep power-down (all banks idle), or CLOCK SUSPEND
operation (burst/access in progress). CKE is synchronous except after the
device enters power-down and self refresh modes, where CKE becomes
asynchronous until after exiting the same mode. The input buffers,
including CLK, are disabled during power-down and self refresh modes,
providing low standby power. CKE may be tied HIGH.
G9
CS#
Input
Chip select: CS# enables (registered LOW) and disables (registered HIGH)
the command decoder. All commands are masked when CS# is registered
HIGH. CS# provides for external bank selection on systems with multiple
banks. CS# is considered part of the command code.
F7, F8, F9
E8, F1
CAS#, RAS#,
WE#
LDQM,
UDQM
Input
Input
Command inputs: CAS#, RAS#, and WE# (along with CS#) define the
command being entered.
Input/Output mask: DQM is sampled HIGH and is an input mask signal for
write accesses and an output enable signal for read accesses. Input data is
masked during a WRITE cycle. The output buffers are placed in a High-Z
state (two-clock latency) during a READ cycle. LDQM corresponds to DQ0–
DQ7, UDQM corresponds to DQ8–DQ15. LDQM and UDQM are considered
same state when referenced as DQM. DQM loading is designed to match
that of DQ balls.
G7, G8
BA0, BA1
Input
Bank address input(s): BA0 and BA1 define to which bank the ACTIVE,
READ, WRITE, or PRECHARGE command is being applied. These balls also
select between the mode register and the extended mode register.
H7, H8, J8, J7, J3, J2, H3,
H2, H1, G3, H9, G2
A0–A11
Input
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ or WRITE
commands, to select one location out of the memory array in the
respective bank. During a PRECHARGE command, A10 determines
whether the PRECHARGE applies to one bank (A10 LOW, bank selected by
BA0, BA1) or all banks (A10 HIGH). The address inputs also provide the op-
code during a LOAD MODE REGISTER command.
A8, B9, B8, C9, C8, D9,
DQ0–DQ15
I/O
Data input/output: Data bus.
D8, E9, E1, D2, D1, C2,
C1, B2, B1, A2
E2, G1
DNU/NC
DNU = do not use: Must be left unconnected.
NC = no connect (internally unconnected): Can be left unconnected, but it
is recommended that it is connected to V SS .
A7, B3, C7, D3
A3, B7, C3, D7
A9, E7, J9
A1, E3, J1
V DD Q
V SS Q
V DD
V SS
Supply
Supply
Supply
Supply
DQ power: Provide isolated power to DQs for improved noise immunity.
DQ ground: Provide isolated ground to DQs for improved noise immunity.
Core power supply.
Ground.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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