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参数资料
| 型号： | MT48H8M16LFB4-75 IT:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 33/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1530-6 |
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128Mb: x16 Mobile SDRAM
Truth Tables
Truth Tables
Table 6:
Truth Table 2 – CKE
Notes: 1–4; notes appear below table
CKE n-1
L
CKE n
L
Current State
Power-Down
Command n
X
Action n
Maintain power-down
Notes
Self refresh
Clock suspend
X
X
Maintain self refresh
Maintain clock suspend
Deep power-down
X
Maintain deep power-down
5
L
H
H
L
Power-Down
Deep power-down
Self refresh
Clock suspend
All banks idle
All banks idle
COMMAND INHIBIT or NOP
X
COMMAND INHIBIT or NOP
X
COMMAND INHIBIT or NOP
BURST TERMINATE
Exit power-down
Exit deep power-down
Exit self refresh
Exit clock suspend
Power-Down entry
Deep power-down entry
6
5
7
8
5
All banks idle
Reading or Writing
AUTO REFRESH
VALID
Self refresh entry
Clock suspend entry
H
H
Notes:
See Truth Table 3
1. CKE n is the logic state of CKE at clock edge n ; CKE n-1 was the state of CKE at the previous
clock edge.
2. Current state is the state of the SDRAM immediately prior to clock edge n .
3. COMMAND n is the command registered at clock edge n , and ACTION n is a result of COM-
MAND n .
4. All states and sequences not shown are illegal or reserved.
5. Deep power-down is a power-saving feature of this Mobile SDRAM device. This command is
BURST TERMINATE when CKE is HIGH and deep power-down when CKE is LOW.
6. Exiting power-down at clock edge n will put the device in the all banks idle state in time for
clock edge n + 1 (provided that t CKS is met).
7. Exiting self refresh at clock edge n will put the device in the all banks idle state once t XSR is
met. COMMAND INHIBIT or NOP commands should be issued on any clock edges occurring
during the t XSR period. A minimum of two NOP commands must be provided during t XSR
period.
8. After exiting clock suspend at clock edge n , the device will resume operation and recognize
the next command at clock edge n + 1.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
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|---|---|
| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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