参数资料
型号: MT48H8M16LFB4-75 IT:K TR
厂商: Micron Technology Inc
文件页数: 13/63页
文件大小: 0K
描述: IC SDRAM 128MBIT 133MHZ 54VFBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 128M(8Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 标准包装
其它名称: 557-1530-6
128Mb: x16 Mobile SDRAM
Mode Register Definition
WRITE and READ commands occur to any bank selected during standard operation, but
only the selected banks, or segments of banks, in PASR will be refreshed during SELF
REFRESH. It is important to note that data in unused banks, or portions of banks, will be
lost when PASR is used.
Driver Strength
Bits E5 and E6 of the extended mode register can be used to select the driver strength of
the DQ outputs. This value should be set according to the application’s requirements.
Full drive strength is suitable to drive higher load systems. Half drive strength is
intended for multi-drop systems with various loads. Quarter drive strength is intended
for lighter loads or point-to-point systems.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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MT48H8M16LFB4-8 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘