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参数资料
| 型号： | MT48H8M16LFB4-75 IT:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 12/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1530-6 |
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128Mb: x16 Mobile SDRAM
Mode Register Definition
The extended mode register is programmed via the MODE REGISTER SET command
(with BA1 = 1 and BA0 = 0) and retains the stored information until it is programmed
again or the device loses power.
The extended mode register must be loaded when all banks are idle and no bursts are in
progress, and the controller must wait the specified time before initiating any subse-
quent operation. Violating either of these requirements will result in unspecified opera-
tion.
Figure 6:
Extended Mode Register Diagram
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address Bus
E13
E12 E11 E10 E9 E8 E7 E6 E5 E4 E3 E2 E1 E0
TCSR
13
Register Select
12 11 10 9 8 7
All must be set to “0”
6
DS
5
4 3
1
2 1
PASR
0
Extended Mode
Register (Ex)
E13 E12 Mode Register Definintion
E4
E3 Maximum Case Temp
0
0
1
1
0
1
0
1
Base Mode Register
Reserved
Extended mode register
Reserved
1
0
0
1
0
1
85°C
70°C
45°C
1
0
15°C
E6 E5 Driver Strength
E2
E1
E0
Self Refresh Coverage
0
0
1
1
0 Full strength
1 Half strength
0 Quarter strength
1 Reserved
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Four banks 2
Two banks
One bank
Reserved
Reserved
1/2 bank
1/4 bank
Reserved
Notes:
1. On-die temperature sensor is used in place of the TCSR. Setting these bits has no effect.
Temperature-Compensated Self Refresh (TCSR)
On this version of the Mobile SDR SDRAM, a temperature sensor is implemented for
automatic control of the self refresh oscillator on the device. Therefore, it is recom-
mended not to program or use the temperature-compensated self refresh control bits in
the extended mode register.
Programming of the TCSR bits has no effect on the device. The self refresh oscillator will
continue refresh at the factory programmed optimal rate for the device temperature.
Partial-Array Self Refresh (PASR)
For further power savings during SELF REFRESH, the PASR feature allows the controller
to select the amount of memory that will be refreshed during SELF REFRESH. The
following refresh options are available:
1. All banks (banks 0, 1, 2, and 3).
2. Two banks (banks 0 and 1; BA1 = 0)
3. One bank (bank 0; BA1 = BA0 = 0)
4. Half bank (bank 0, BA1 = BA0 = row address MSB = 0)
5. Quarter bank (bank0, BA1 = BA0 = row address MSB = row address MSB - 1 = 0)
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
12
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
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| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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