参数资料
型号: MT48H8M16LFB4-75 IT:K TR
厂商: Micron Technology Inc
文件页数: 16/63页
文件大小: 0K
描述: IC SDRAM 128MBIT 133MHZ 54VFBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: 移动 SDRAM
存储容量: 128M(8Mx16)
速度: 133MHz
接口: 并联
电源电压: 1.7 V ~ 1.95 V
工作温度: -40°C ~ 85°C
封装/外壳: 54-VFBGA
供应商设备封装: 54-VFBGA(8x8)
包装: 标准包装
其它名称: 557-1530-6
128Mb: x16 Mobile SDRAM
Commands
PRECHARGE
The PRECHARGE command is used to deactivate the open row in a particular bank or
the open row in all banks. The bank(s) will be available for a subsequent row access a
specified time ( t RP) after the PRECHARGE command is issued. Input A10 determines
whether one or all banks are to be precharged, and in the case where only 1 bank is to be
precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t
Care.” Once a bank has been precharged, it is in the idle state and must be activated
prior to any READ or WRITE commands being issued to that bank.
Auto Precharge
Auto precharge is a feature which performs the same individual-bank precharge func-
tion described above, without requiring an explicit command. This is accomplished by
using A10 to enable auto precharge in conjunction with a specific READ or WRITE
command. A precharge of the bank/row that is addressed with the READ or WRITE
command is automatically performed upon completion of the READ or WRITE burst.
Auto precharge is non persistent because it is either enabled or disabled for each indi-
vidual READ or WRITE command.
Auto precharge ensures that the precharge is initiated at the earliest valid stage within a
burst. The user must not issue another command to the same bank until the precharge
time ( t RP) is completed. This is determined as if an explicit PRECHARGE command was
issued at the earliest possible time, as described for each burst type in “Operation” on
page 17.
BURST TERMINATE
The BURST TERMINATE command is used to truncate fixed-length bursts. The most
recently registered READ or WRITE command prior to the BURST TERMINATE
command will be truncated, as shown in “Operation” on page 17.
AUTO REFRESH
AUTO REFRESH is used during normal operation of the SDRAM and is analogous to
CAS#-BEFORE-RAS# (CBR) refresh in conventional DRAMs. This command is nonper-
sistent, so it must be issued each time a refresh is required. All active banks must be
PRECHARGED prior to issuing an AUTO REFRESH command. The AUTO REFRESH
command should not be issued until the minimum t RP has been met after the
PRECHARGE command as shown in “Operation” on page 17.
The addressing is generated by the internal refresh controller. This makes the address
bits “Don’t Care” during an AUTO REFRESH command. The 128Mb SDRAM requires
4,096 AUTO REFRESH cycles every 64ms ( t REF). Providing a distributed AUTO
REFRESH command every 15.625μs will meet the refresh requirement and ensure that
each row is refreshed. Alternatively, 4,096 AUTO REFRESH commands can be issued in a
burst at the minimum cycle rate ( t RFC), once every 64ms.
SELF REFRESH
The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest
of the system is powered down, as long as power is not completely removed from the
SDRAM. When in the self refresh mode, the SDRAM retains data without external
clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
16
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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MT48H8M16LFB4-8 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA
MT48H8M16LFB4-8 IT TR 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘