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参数资料
| 型号： | MT48H8M16LFB4-75 IT:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 36/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1530-6 |
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128Mb: x16 Mobile SDRAM
Truth Tables
Table 8:
Truth Table 4 – Current State Bank n , Command to Bank m
Notes: 1–6; notes appear below and on next page
Current State
Any
Idle
Row
Activating,
Active, or
Precharging
Read
(Auto
Precharge
Disabled)
Write
(Auto
Precharge
Disabled)
Read
(With Auto
Precharge)
Write
(With Auto
Precharge)
CS#
H
L
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
RAS#
X
H
X
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
CAS#
X
H
X
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
WE#
X
H
X
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
H
H
L
L
Command (Action)
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
Any command allowed to bank m
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE
ACTIVE (Select and activate row)
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE
Notes
7
7
7, 8
7, 9
10
7, 11
7, 12
10
7, 13, 14
7, 13, 15
10
7, 13, 16
7, 13, 17
10
Notes:
1. This table applies when CKE n-1 was HIGH and CKE n is HIGH (see Truth Table 2) and after
t XSR has been met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is
for bank n and the commands shown are those allowed to be issued to bank m (assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
3. Current state definitions:
Idle:
Row active:
Read:
Write:
Read w/auto
precharge enabled:
Write w/auto
precharge enabled:
The bank has been precharged, and t RP has been met.
A row in the bank has been activated, and t RCD has been met. No
data bursts/accesses and no register accesses are in progress.
A READ burst has been initiated, with auto precharge disabled, and
has not yet terminated or been terminated.
A WRITE burst has been initiated, with auto precharge disabled, and
has not yet terminated or been terminated.
Starts with registration of a READ command with auto precharge
enabled, and ends when t RP has been met. Once t RP is met, the
bank will be in the idle state.
Starts with registration of a WRITE command with auto precharge
enabled, and ends when t RP has been met. Once t RP is met, the
bank will be in the idle state.
4. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands may only be issued
when all banks are idle.
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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