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参数资料
| 型号： | MT48H8M16LFB4-75 IT:K TR |
| 厂商： | Micron Technology Inc |
| 文件页数： | 30/63页 |
| 文件大小： | 0K |
| 描述： | IC SDRAM 128MBIT 133MHZ 54VFBGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | 移动 SDRAM |
| 存储容量： | 128M（8Mx16） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 1.7 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 54-VFBGA |
| 供应商设备封装： | 54-VFBGA（8x8） |
| 包装： | 标准包装 |
| 其它名称： | 557-1530-6 |
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128Mb: x16 Mobile SDRAM
Operation
Figure 26:
Clock Suspend During READ Burst
T0
T1
T2
T3
T4
T5
T 6
C LK
C KE
INTERNAL
C LO C K
C OMMAND
READ
NOP
NOP
NOP
NOP
NOP
ADDRE SS
C OL n
BANK,
DQ
D OUT
n
D OUT
n +1
D OUT
n +2
D OUT
n +3
DON ’ T C ARE
Notes:
1. CL = 2, BL = 4 or greater, and DQM is LOW.
Burst Read/Single Write
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the
access of a single column location (burst of one), regardless of the programmed BL.
READ commands access columns according to the programmed BL and sequence, just
as in the normal mode of operation (M9 = 0).
Concurrent Auto Precharge
Micron SDRAM devices support concurrent auto precharge, which allows an access
command (READ or WRITE) to another bank while an access command with auto
precharge enabled is executing. Four cases where concurrent auto precharge occurs are
defined below.
READ with Auto Precharge
1. Interrupted by a READ (with or without auto precharge): A READ to bank m will inter-
rupt a READ on bank n , 2 or 3 clocks later, depending on CL. The precharge to bank n
will begin when the READ to bank m is registered (see Figure 27 on page 31).
2. Interrupted by a WRITE (with or without auto precharge): When a WRITE to bank m
registers, a READ on bank n will be interrupted. DQM should be used 2 clocks prior to
the WRITE command to prevent bus contention. The precharge to bank n will begin
when the WRITE to bank m is registered (see Figure 28 on page 31).
PDF: 09005aef8237e877/Source: 09005aef8237e8d8
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. C 2/07 EN
30
Micron Technology, Inc., reserves the right to change products or specifications without notice.
?2006 Micron Technology, Inc. All rights reserved.
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相关代理商/技术参数 |
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| MT48H8M16LFB4-8 | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT | 制造商:Micron Technology Inc 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA |
| MT48H8M16LFB4-8 IT TR | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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