- 您现在的位置：买卖IC网 > PDF目录225025 > RC28F256P33T85A (NUMONYX) 16M X 16 FLASH 3V PROM, 85 ns, PBGA64 PDF资料下载
参数资料
| 型号： | RC28F256P33T85A |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 85 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 61/96页 |
| 文件大小： | 1378K |
| 代理商： | RC28F256P33T85A |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页当前第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页第83页第84页第85页第86页第87页第88页第89页第90页第91页第92页第93页第94页第95页第96页
Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
64
Order Number: 314749-05
11.4.5
Security Modes
The device features security modes used to protect the information stored in the flash
memory array. The following sections describe each security mode in detail.
11.4.6
Block Locking
Individual instant block locking is used to protect user code and/or data within the flash
memory array. All blocks power up in a locked state to protect array data from being
altered during power transitions. Any block can be locked or unlocked with no latency.
Locked blocks cannot be programmed or erased; they can only be read.
Software-controlled security is implemented using the Block Lock and Block Unlock
commands. Hardware-controlled security can be implemented using the Block Lock-
Down command along with asserting WP#. Also, VPP data security can be used to
inhibit program and erase operations (see Section 11.3.6, “Program Protection” on
The Numonyx StrataFlash Embedded Memory (P33) device also offers four pre-
defined areas in the main array that can be configured as One-Time Programmable
(OTP) for the highest level of security. These include the four 32 KB parameter blocks
together as one and the three adjacent 128 KB main blocks. This is available for top or
bottom parameter devices.
11.4.6.1
Lock Block
To lock a block, issue the Lock Block Setup command. The next command must be the
Lock Block command issued to the desired block’s address (see Section 9.6, “Device
page 75). If the Set Read Configuration Register command is issued after the Block
Lock Setup command, the device configures the RCR instead.
Block lock and unlock operations are not affected by the voltage level on VPP. The block
lock bits may be modified and/or read even if VPP is at or below VPPLK.
11.4.6.2
Unlock Block
The Unlock Block command is used to unlock blocks (see Section 9.6, “Device
Command Bus Cycles” on page 44). Unlocked blocks can be read, programmed, and
erased. Unlocked blocks return to a locked state when the device is reset or powered
down. If a block is in a lock-down state, WP# must be deasserted before it can be
unlocked (see Figure 31, “Block Locking State Diagram” on page 65).
11.4.6.3
Lock-Down Block
A locked or unlocked block can be locked-down by writing the Lock-Down Block
command sequence (see Section 9.6, “Device Command Bus Cycles” on page 44).
Blocks in a lock-down state cannot be programmed or erased; they can only be read.
However, unlike locked blocks, their locked state cannot be changed by software
commands alone. A locked-down block can only be unlocked by issuing the Unlock
Block command with WP# deasserted. To return an unlocked block to locked-down
state, a Lock-Down command must be issued prior to changing WP# to VIL. Locked-
down blocks revert to the locked state upon reset or power up the device (see
相关PDF资料 |
PDF描述 |
|---|---|
| RC28F160C3TC90 | 1M X 16 FLASH 3V PROM, 90 ns, PBGA64 |
| RC28F160C3BD70 | 1M X 16 FLASH 3V PROM, 70 ns, PBGA64 |
| RC4194K | DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9 |
| RM4194K | DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, MBFM9 |
| RC4194D | DUAL OUTPUT, ADJUSTABLE MIXED REGULATOR, CDIP14 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| RC28F256P33T85B | 制造商:Micron Technology Inc 功能描述:256MB, KEARNY EBGA 3.0 - Tape and Reel |
| RC28F256P33TFA | 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| RC28F256P33TFE | 功能描述:IC FLASH 256MBIT 64EZBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| RC28F320C3 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| RC28F320C3BA100 | 功能描述:IC FLASH 32MBIT 100NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
发布紧急采购，3分钟左右您将得到回复。