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参数资料
| 型号： | RC28F256P33T85A |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 85 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 78/96页 |
| 文件大小： | 1378K |
| 代理商： | RC28F256P33T85A |
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Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
8
Order Number: 314749-05
2.0
Functional Overview
This section provides an overview of the features and capabilities of the Numonyx
StrataFlash Embedded Memory (P33) device.
The Kearny Family Flash memory provides density upgrades from 64-Mbit through 512-
Mbit. This family of devices provides high performance at low voltage on a 16-bit data
bus. Individually erasable memory blocks are sized for optimum code and data storage.
Upon initial power up or return from reset, the device defaults to asynchronous page-
mode read. Configuring the RCR enables synchronous burst-mode reads. In
synchronous burst mode, output data is synchronized with a user-supplied clock signal.
A WAIT signal provides an easy CPU-to-flash memory synchronization.
In addition to the enhanced architecture and interface, the device incorporates
technology that enables fast factory program and erase operations. Designed for low-
voltage systems, the Kearny Family Flash memory supports read operations with VCC at
3.0V, and erase and program operations with VPP at 3.0V or 9.0V. BEFP provides the
fastest flash array programming performance with VPP at 9.0V, which increases factory
throughput. With VPP at 3.0V, VCC and VPP can be tied together for a simple, ultra low
power design. In addition to voltage flexibility, a dedicated VPP connection provides
complete data protection when VPP ≤ VPPLK.
The CUI is the interface between the system processor and all internal operations of
the device. An internal WSM automatically executes the algorithms and timings
necessary for block erase and program. A Status Register indicates erase or program
completion and any errors that may have occurred.
An industry-standard command sequence invokes program and erase automation. Each
erase operation erases one block. The Erase Suspend feature allows system software to
pause an erase cycle to read or program data in another block. Program Suspend
allows system software to pause programming to read other locations. Data is
programmed in word increments (16 bits).
The Kearny Family Flash memory protection register allows unique flash device
identification that can be used to increase system security. The individual Block Lock
feature provides zero-latency block locking and unlocking. In addition, the Kearny
Family Flash memory may also pre-define main array space as OTP.
2.1
Virtual Chip Enable Description
The 512 Mbit Kearny Family Flash memory employs a Virtual Chip Enable which
combines two 256-Mbit die with a common chip enable, F1-CE# for QUAD+ packages
Address A24 (QUAD+ package) or A25 (Easy BGA and TSOP package) is then used to
select between the die pair with F1-CE# / CE# asserted, depending upon the package
option used. When chip enable is asserted and QUAD+ A24 (Easy BGA A25) is low
(VIL), The lower parameter die is selected; when chip enable is asserted and QUAD+
additional details.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| RC28F256P33T85B | 制造商:Micron Technology Inc 功能描述:256MB, KEARNY EBGA 3.0 - Tape and Reel |
| RC28F256P33TFA | 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| RC28F256P33TFE | 功能描述:IC FLASH 256MBIT 64EZBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| RC28F320C3 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| RC28F320C3BA100 | 功能描述:IC FLASH 32MBIT 100NS 64BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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