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参数资料
| 型号： | RC28F256P33T85A |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 85 ns, PBGA64 |
| 封装： | BGA-64 |
| 文件页数： | 81/96页 |
| 文件大小： | 1378K |
| 代理商： | RC28F256P33T85A |
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Numonyx StrataFlash Embedded Memory (P33)
Datasheet
November 2007
82
Order Number: 314749-05
Table 40: Protection Register Information
Table 41: Burst Read Information
Offset
(1)
Length
Description
Hex
P = 10Ah
(Optional flash features and commands)
Add. Code Value
(P+E)h
1
118:
--02
2
(P+F)h
4
Protection Field 1: Protection Description
119:
--80
80h
(P+10)h
This field describes user-available One Time Programmable
11A:
--00
00h
(P+11)h
(OTP) Protection register bytes. Some are pre-programmed
11B:
--03
8 byte
(P+12)h
11C:
--03
8 byte
(P+13)h
10
Protection Field 2: Protection Description
11D:
--89
89h
(P+14)h
11E:
--00
00h
(P+15)h
11F:
--00
00h
(P+16)h
120:
--00
00h
(P+17)h
121:
--00
0
(P+18)h
bits 40–47 = “n”
∴ n = factory pgm'd groups (high byte)
122:
--00
0
(P+19)h
123:
--00
0
(P+1A)h
124:
--10
16
(P+1B)h
125:
--00
0
(P+1C)h
126:
--04
16
bits 48–55 = “n” \ 2n = factory programmable bytes/group
bits 56–63 = “n”
∴ n = user pgm'd groups (low byte)
bits 64–71 = “n”
∴ n = user pgm'd groups (high byte)
bits 72–79 = “n”
∴ 2n = user programmable bytes/group
with device-unique serial numbers. Others are user
programmable. Bits 0–15 point to the Protection register Lock
byte, the section’s first byte. The following bytes are factory
pre-programmed and user-programmable.
bits 0–7 = Lock/bytes Jedec-plane physical low address
bits 8–15 = Lock/bytes Jedec-plane physical high address
bits 16–23 = “n” such that 2n = factory pre-programmed bytes
bits 24–31 = “n” such that 2n = user programmable bytes
Bits 0–31 point to the Protection register physical Lock-word
address in the Jedec-plane.
Following bytes are factory or user-programmable.
bits 32–39 = “n”
∴ n = factory pgm'd groups (low byte)
Number of Protection register fields in JEDEC ID space.
“00h,” indicates that 256 protection fields are available
Offset
(1)
Length
Description
Hex
P = 10Ah
(Optional flash features and commands)
Add. Code Value
(P+1D)h
1
127:
--03
8 byte
(P+1E)h
1
128:
--04
4
(P+1F)h
1
129:
--01
4
(P+20)h
1
Synchronous mode read capability configuration 2
12A:
--02
8
(P+21)h
1
Synchronous mode read capability configuration 3
12B:
--03
16
(P+22)h
1
Synchronous mode read capability configuration 4
12C:
--07
Cont
Page Mode Read capability
bits 0–7 = “n” such that 2n HEX value represents the number of
read-page bytes. See offset 28h for device word width to
determine page-mode data output width. 00h indicates no
read page buffer.
Number of synchronous mode read configuration fields that
follow. 00h indicates no burst capability.
Synchronous mode read capability configuration 1
Bits 3–7 = Reserved
bits 0–2 “n” such that 2n+1 HEX value represents the
maximum number of continuous synchronous reads when
the device is configured for its maximum word width. A value
of 07h indicates that the device is capable of continuous
linear bursts that will output data until the internal burst
counter reaches the end of the device’s burstable address
space. This field’s 3-bit value can be written directly to the
Read Configuration Register bits 0–2 if the device is
configured for its maximum word width. See offset 28h for
word width to determine the burst data output width.
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