
6
Preliminary User’s Manual U16031EJ2V1UD
Major Revisions in This Edition (1/4)
Page
Description
Throughout
Addition of the following product.
PD703111GM-15-UEU
Change of the following register name.
PFCAL
→ PFCALL
p.29
Addition of execution time of 150 MHz products to minimum instruction execution time in 1.2 Features
p.45
Addition of Note in 2.1 (2) Non-port pins
p.48
Addition of description in 2.3 (1) (b) (vii) UCLK (USB clock)
p.50
Modification of description in 2.3 (3) (b) (ii) DMAAK0, DMAAK1 (DMA acknowledge)
p.52
Modification of description in 2.3 (5) (b) (ii) DMAAK2, DMAAK3 (DMA acknowledge)
p.68
Addition of execution time of 150 MHz products to minimum instruction execution time in 3.1 Features
p.70
Modification of default value in 3.2.1 (2) Program counter (PC)
pp.86, 98
Modification of description in 3.4.7 Peripheral I/O registers
p.111
Change of table of VSWC setting values in 3.4.9 System wait control register (VSWC)
p.115
Modification of description in 4.2.1 Pin status during internal instruction RAM, internal data RAM, and
peripheral I/O access
p.121
Modification of description when BTn1 and BTn0 bits are set to 11 in 4.4.1 (1) Bus cycle type
configuration registers 0, 1 (BCT0, BCT1)
p.122
Modification of table of number of access clocks in 4.5.1 Number of access clocks
p.146
Addition to Cautions and modification of description in 4.5.6 (1) Line buffer control registers 0, 1 (LBC0,
LBC1)
p.147
Addition of Remark in 4.5.6 (1) (a) Speculative read function (read buffer function)
pp.148, 149
Modification of description, addition of Note, and addition to Cautions in 4.5.6 (1) (b) Write buffer function
p.155
Addition to Cautions in 4.7.1 (3) Bus cycle period control register (BCP)
p.161
Modification of Cautions in 4.9.1 (1) Cache configuration register (BHC)
p.170
Addition of (5) in 4.10.3 Cautions
p.177
Addition of timing and modification of Notes in 4.11.6 (1) SDRAM (when read, latency = 2, no idle state
insertion)
p.178
Addition of timing and modification of Notes in 4.11.6 (2) SDRAM (when read, latency = 2, two idle states
inserted, 32-bit bus width)
p.179
Addition of timing and modification of Notes in 4.11.6 (3) SDRAM (when written)
p.182
Addition of 4.14 Timing at Which T0 State Is Not Inserted
pp.214 to 217
Addition of timing and modification of Notes in Figure 5-9 SDRAM Single Read Cycle
pp.220 to 224
Addition of timing and modification of Notes in Figure 5-10 SDRAM Single Write Cycle
pp.227, 228,
232 to 234
Addition of timing and modification of Notes in Figure 5-11 SDRAM Access Timing
p.236
Modification of Caution in 5.3.6 (1) SDRAM refresh control registers 1, 3, 4, 6 (RFS1, RFS3, RFS4,
RFS6)
p.238
Modification of description in Table 5-1 Example of Interval Factor Settings
p.247
Addition of internal instruction RAM in block diagram in 6.2 Configuration
p.248
Addition to Cautions in 6.3.1 (1) DMA source address registers 0H to 3H (DSA0H to DSA3H)
p.250
Addition to Cautions in 6.3.2 (1) DMA destination address registers 0H to 3H (DDA0H to DDA3H)