参数资料
型号: ADSP-21375KSWZ-2B
厂商: Analog Devices Inc
文件页数: 7/56页
文件大小: 0K
描述: IC DSP 32BIT 266MHZ 208-MQFP
产品培训模块: SHARC Processor Overview
标准包装: 36
系列: SHARC®
类型: 浮点
接口: DAI,DPI
时钟速率: 266MHz
非易失内存: ROM(256 kB)
芯片上RAM: 64kB
电压 - 输入/输出: 3.30V
电压 - 核心: 1.20V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 208-LQFP 裸露焊盘
供应商设备封装: 208-LQFP-EP(28x28)
包装: 托盘
Table 4. ADSP-21375 Internal Memory Space
IOP Registers 0x0000 0000–0x0003 FFFF
Extended Precision Normal or
Long Word (64 bits)
BLOCK 0 ROM
0x0004 0000–0x0004 3FFF
Reserved
0x0004 4000–0x0004 BFFF
BLOCK 0 RAM
0x0004 C000–0x0004 C7FF
Reserved
0x0004 C800–0x0004 FFFF
BLOCK 1 ROM
0x0005 0000–0x0005 3FFF
Reserved
0x0005 4000–0x0005 BFFF
BLOCK 1 RAM
0x0005 C000–0x0005 C7FF
Reserved
0x0005 C800–0x0005 FFFF
BLOCK 2 RAM
0x0006 0000–0x0006 07FF
Reserved
0x0006 0800–0x0006 FFFF
BLOCK 3 RAM
0x0007 0000–0x0007 07FF
Reserved
0x0007 0800–0x0007 FFFF
Instruction Word (48 bits)
BLOCK 0 ROM
0x0008 0000–0x0008 5554
Reserved
0x0008 5555–0x0008 FFFF
BLOCK 0 RAM
0x0009 0000–0x0009 0AA9
Reserved
0x0009 0AAA–0x0009 FFFF
BLOCK 1 ROM
0x000A 0000–0x000A 5554
Reserved
0x000A 5555–0x000A FFFF
BLOCK 1 RAM
0x000B 0000–0x000B 0AA9
Reserved
0x000B 0AAA–0x000B FFFF
BLOCK 2 RAM
0x000C 0000–0x000C 0AA9
Reserved
0x000C 0AAA–0x000D FFFF
BLOCK 3 RAM
0x000E 0000–0x000E 0AA9
Reserved
0x000E 0AAA–0x000F FFFF
Normal Word (32 bits)
BLOCK 0 ROM
0x0008 0000–0x0008 7FFF
Reserved
0x0008 8000–0x0009 7FFF
BLOCK 0 RAM
0x0009 8000–0x0009 8FFF
Reserved
0x0009 9000–0x0009 FFFF
BLOCK 1 ROM
0x000A 0000–0x000A 7FFF
Reserved
0x000A 8000–0x000B 7FFF
BLOCK 1 RAM
0x000B 8000–0x000B 8FFF
Reserved
0x000B 9000–0x000B FFFF
BLOCK 2 RAM
0x000C 0000–0x000C 0FFF
Reserved
0x000C 1000–0x000D FFFF
BLOCK 3 RAM
0x000E 0000–0x000E 0FFF
Reserved
0x000E 1000–0x000F FFFF
Short Word (16 bits)
BLOCK 0 ROM
0x0010 0000–0x0010 FFFF
Reserved
0x0011 0000–0x0012 FFFF
BLOCK 0 RAM
0x0013 0000–0x0013 1FFF
Reserved
0x0013 2000–0x0013 FFFF
BLOCK 1 ROM
0x0014 0000–0x0014 FFFF
Reserved
0x0015 0000–0x0016 FFFF
BLOCK 1 RAM
0x0017 0000–0x0017 1FFF
Reserved
0x0017 2000–0x0017 FFFF
BLOCK 2 RAM
0x0018 0000–0x0018 1FFF
Reserved
0x0018 2000–0x001B FFFF
BLOCK 3 RAM
0x001C 0000–0x001C 1FFF
Reserved
0x001C 2000–0x001F FFFF
SDRAM Controller
Table 5. External Memory for SDRAM Addresses
The SDRAM controller provides an interface to up to four sepa-
rate banks of industry-standard SDRAM devices or DIMMs.
Fully compliant with the SDRAM standard, each bank has its
own memory select line (MS0–MS3), and can be configured to
contain between 16M bytes and 256M bytes of memory.
SDRAM external memory address space is shown in Table 5 .
Bank
Bank 0
Bank 1
Bank 2
Bank 3
Size in Words
62M
64M
64M
64M
Address Range
0x0020 0000–0x03FF FFFF
0x0400 0000–0x07FF FFFF
0x0800 0000–0x0BFF FFFF
0x0C00 0000–0x0FFF FFFF
The controller maintains all of the banks as a contiguous
address space so that the processor sees this as a single address
space, even if different size devices are used in the
different banks.
A set of programmable timing parameters is available to config-
ure the SDRAM banks to support slower memory devices. The
memory banks can be configured as 16 bits wide or as
32 bits wide. The SDRAM controller address, data, clock, and
command pins can drive loads up to 30 pF. For larger memory
systems, the SDRAM controller external buffer timing should
be selected and external buffering should be provided so that the
load on the SDRAM controller pins does not exceed 30 pF.
Note that the external memory bank addresses shown in Table 5
are for normal word accesses. If 48-bit instructions are placed in
any such bank (with two instructions packed into three 32-bit
locations), then care must be taken to map data buffers in the
same bank. For example, if 2k instructions are placed starting at
the bank 0 base address (0x0020 0000), then the data buffers can
be placed starting at an address that is offset by 3k words
(0x0020 0C00).
External Memory Code Execution
The program sequencer can execute code directly from external
memory bank 0 (SRAM, SDRAM) over the 48-bit external port
data bus (EPD). This allows a reduction in internal memory
size, thereby reducing the die area. Because instructions on the
Rev. D | Page 7 of 56 | April 2013
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