参数资料
型号: MT18HTF12872G-40EC2
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
封装: DIMM-240
文件页数: 12/36页
文件大小: 672K
代理商: MT18HTF12872G-40EC2
512MB, 1GB, 2GB (x72, REGISTERED)
PC2-3200, PC2-4300, 240-Pin DDR2 SDRAM DIMM
09005aef80e5e626
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72G_A.fm - Rev. A 9/03 EN
2
2003 Micron Technology. Inc.
NOTE:
1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory
for current revision codes. Example: MT18HTF12872G-40EC2.
2. Contact Micron for product availability.
Table 1: Key Timing Parameters
SPEED GRADE
DATA RATE (MHz)
tRCD
(ns)
tRP
(ns)
tRC
(ns)
CL = 3
CL = 4
-53E
400
533
15
60
-40E
400
15
60
Table 2:
Part Numbers and Timing Parameters
PART NUMBER1
MODULE
DENSITY
CONFIGURATION
MODULE
BANDWIDTH
MEMORY CLOCK/
DATA RATE
LATENCY
(CL - tRCD - tRP)
MT18HTF6472G-40E__
512MB
64 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF6472Y-40E__
512MB
64 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF6472G-53E__
512MB
64 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
MT18HTF6472Y-53E__
512MB
64 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
MT18HTF12872G-40E__2
1GB
128 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF12872Y-40E__2
1GB
128 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF12872G-53E__2
1GB
128 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
MT18HTF12872Y-53E__2
1GB
128 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
MT18HTF25672G-40E__2
2GB
256 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF25672Y-40E__2
2GB
256 Meg x 72
3.2 GB/s
5.0ns/400 MT/s
3-3-3
MT18HTF25672G-53E__2
2GB
256 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
MT18HTF25672Y-53E__2
2GB
256 Meg x 72
4.3 GB/s
3.75ns/533 MT/s
4-4-4
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