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参数资料
| 型号： | MT18HTF12872G-40EC2 |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封装： | DIMM-240 |
| 文件页数： | 28/36页 |
| 文件大小： | 672K |
| 代理商： | MT18HTF12872G-40EC2 |
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512MB, 1GB, 2GB (x72, REGISTERED)
PC2-3200, PC2-4300, 240-Pin DDR2 SDRAM DIMM
09005aef80e5e626
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72G_A.fm - Rev. A 9/03 EN
34
2003 Micron Technology. Inc.
Table 27:
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
BYTE
DESCRIPTION
ENTRY (VERSION)
MT18HTF6472 MT18HTF12872 MT18HTF25672
0
Number of SPD Bytes Used by Micron
128
80
TBD
1
Total Number of Bytes in SPD Device
256
08
TBD
2
Fundamental Memory Type
SDRAM DDR
08
TBD
3
Number of Row Addresses on
Assembly
12 or 13
0D
TBD
4
Number of Column Addresses on
Assembly
11
0B
TBD
5
DIMM Height and Module Ranks
1.18in., Single Rank
60
TBD
6
Module Data Width
72
48
TBD
7
Module Data Width (Continued)
000
TBD
8
Module Voltage Interface Levels
SSTL 1.8V
05
TBD
9
SDRAM Cycle Time, tCK (CAS Latency
= 2.5)
-53E
-40E
3D
50
TBD
10
SDRAM Access from Clock,tAC (CAS
Latency = 2.5)
-53E
-40E
50
60
TBD
11
Module Configuration Type
ECC
02
TBD
12
Refresh Rate/Type
7.81s/SELF
82
TBD
13
SDRAM Device Width (Primary
SDRAM)
404
TBD
14
Error-checking SDRAM Data Width
804
TBD
15
Minimum Clock Delay, Back-to-Back
Random Column Access
1 clock
00
TBD
16
Burst Lengths Supported
4, 8
0C
TBD
17
Number of Banks on SDRAM Device
404
TBD
18
CAS Latencies Supported
2, 3, 4
18
TBD
19
Reserved
000
TBD
20
DDR2 DIMM Type
101
TBD
21
SDRAM Module Attributes
Registered
00
TBD
22
SDRAM Device Attributes: General
Fast/Concurrent AP
01
TBD
23
SDRAM Cycle Time, tCK, (CAS Latency
= 2)
-53E
-40E
50
TBD
24
SDRAM Access from CK, tAC, (CAS
Latency = 2)
-53E
-40E
50
60
TBD
25
SDRAM Cycle Time, tCK, (CAS Latency
= 1.5)
N/A
00
TBD
26
SDRAM Access from CK, tAC, (CAS
Latency = 1.5)
N/A
00
TBD
27
Minimum Row Precharge Time, tRP
-53E
-40E
3C
TBD
28
Minimum Row Active to Row Active,
tRRD
-53E
-40E
1E
TBD
29
Minimum RAS# to CAS# Delay, tRCD
-53E
-40E
3C
TBD
30
Minimum RAS# Pulse Width, tRAS
-53E
-40E
2D
TBD
31
Module Rank Density
512MB, 1GB, 2GB
80
TBD
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MT18HTF12872JDY-667F1D4 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL PBF DIMM 1.8V FULLY - Bulk |
| MT18HTF12872M2DY-667F1B4 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE PBF DIMM 1.8V FULLY BUFFERED - Trays |
| MT18HTF12872M2DY-667F1B5 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE CUSTOM 1.8V FULLY BUFFERED - Trays |
| MT18HTF12872M2Y-53EF1 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL CUSTOM 1.8V REGISTE - Bulk |
| MT18HTF12872M3Y-53EF1 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL CUSTOM 1.8V REGISTE - Bulk |
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