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参数资料
| 型号： | MT18HTF12872G-40EC2 |
| 元件分类： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 |
| 封装： | DIMM-240 |
| 文件页数： | 26/36页 |
| 文件大小： | 672K |
| 代理商： | MT18HTF12872G-40EC2 |
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512MB, 1GB, 2GB (x72, REGISTERED)
PC2-3200, PC2-4300, 240-Pin DDR2 SDRAM DIMM
09005aef80e5e626
Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF18C64_128_256x72G_A.fm - Rev. A 9/03 EN
32
2003 Micron Technology. Inc.
Figure 15: SPD EEPROM Timing Diagram
Table 23:
EEPROM Device Select Code
The most significant bit (b7) is sent first
SELECT CODE
DEVICE TYPE IDENTIFIER
CHIP ENABLE
RW
b7
b6
b5
b4
b3
b2
b1
b0
Memory Area Select Code (two arrays)
1
0
1
0
SA2
SA1
SA0
RW
Protection Register Select Code
0
1
0
SA2
SA1
SA0
RW
Table 24:
EEPROM Operating Modes
MODE
RW BIT
WC
BYTES
INITIAL SEQUENCE
Current Address Read
1VIH or VIL
1
START, Device Select, RW = ‘1’
Random Address Read
0VIH or VIL
1
START, Device Select, RW = ‘0’, Address
1VIH or VIL
1
reSTART, Device Select, RW = ‘1’
Sequential Read
1VIH or VIL
1
Similar to Current or Random Address Read
Byte Write
0VIL
1
START, Device Select, RW = ‘0’
Page Write
0VIL
16
START, Device Select, RW = ‘0’
SCL
SDA IN
SDA OUT
tLOW
tSU:STA
tHD:STA
tF
tHIGH
tR
tBUF
tDH
tAA
tSU:STO
tSU:DAT
tHD:DAT
UNDEFINED
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相关代理商/技术参数 |
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| MT18HTF12872JDY-667F1D4 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL PBF DIMM 1.8V FULLY - Bulk |
| MT18HTF12872M2DY-667F1B4 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE PBF DIMM 1.8V FULLY BUFFERED - Trays |
| MT18HTF12872M2DY-667F1B5 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE CUSTOM 1.8V FULLY BUFFERED - Trays |
| MT18HTF12872M2Y-53EF1 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL CUSTOM 1.8V REGISTE - Bulk |
| MT18HTF12872M3Y-53EF1 | 制造商:Micron Technology Inc 功能描述:1GB 128MX72 DDR2 SDRAM MODULE COMMERCIAL CUSTOM 1.8V REGISTE - Bulk |
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