参数资料
型号: MT42L192M32D3LE-3 IT:A
厂商: Micron Technology Inc
文件页数: 119/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 6G(192M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-VFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
AC and DC Logic Input Measurement Levels for Single-Ended
Signals
AC and DC Logic Input Measurement Levels for Single-Ended Signals
Table 63: Single-Ended AC and DC Input Levels for CA and CS# Inputs
LPDDR2-1066 t o LPDDR2-466 LPDDR2-400 to LPDDR2-200
Symbol
V IHCA(AC)
V ILCA(AC)
V IHCA(DC)
V ILCA(DC)
V REFCA(DC)
Parameter
AC input logic HIGH
AC input logic LOW
DC input logic HIGH
DC input logic LOW
Reference voltage for
Min
V REF + 0.220
Note 2
V REF + 0.130
V SSCA
0.49 × V DDCA
Max
Note 2
V REF - 0.220
V DDCA
V REF - 0.130
0.51 × V DDCA
Min
V REF + 0.300
Note 2
V REF + 0.200
V SSCA
0.49 × V DDCA
Max
Note 2
V REF - 0.300
V DDCA
V REF - 0.200
0.51 × V DDCA
Unit
V
V
V
V
V
Notes
1, 2
1, 2
1
1
3, 4
CA and CS# inputs
Notes:
1. For CA and CS# input-only pins. V REF = V REFCA(DC) .
2. See Figure 91 (page 130).
3. The AC peak noise on V REFCA could prevent V REFCA from deviating more than ±1% V DDCA
from V REFCA(DC) (for reference, approximately ±12mV).
4. For reference, approximately V DDCA /2 ±12mV.
Table 64: Single-Ended AC and DC Input Levels for CKE
Symbol
V IHCKE
V ILCKE
Parameter
CKE input HIGH level
CKE input LOW level
Min
0.8 × V DDCA
Note 1
Max
Note 1
0.2 × V DDCA
Unit
V
V
Notes
1
1
Note:
1. See Figure 91 (page 130).
Table 65: Single-Ended AC and DC Input Levels for DQ and DM
LPDDR2-1066 t o LPDDR2-466 LPDDR2-400 to LPDDR2-200
Symbol
V IHDQ(AC)
V ILDQ(AC)
V IHDQ(DC)
V ILDQ(DC)
V REFDQ(DC)
Parameter
AC input logic HIGH
AC input logic LOW
DC input logic HIGH
DC input logic LOW
Reference voltage for
Min
V REF + 0.220
Note 2
V REF + 0.130
V SSQ
0.49 × V DDQ
Max
Note 2
V REF - 0.220
V DDQ
V REF - 0.130
0.51 × V DDQ
Min
V REF + 0.300
Note 2
V REF + 0.200
V SSQ
0.49 × V DDQ
Max
Note 2
V REF - 0.300
V DDQ
V REF - 0.200
0.51 × V DDQ
Unit
V
V
V
V
V
Notes
1, 2
1, 2
1
1
3, 4
DQ and DM inputs
Notes:
1. For DQ input-only pins. V REF = V REFDQ(DC) .
2. See Figure 91 (page 130).
3. The AC peak noise on V REFDQ could prevent V REFDQ from deviating more than ±1% V DDQ
from V REFDQ(DC) (for reference, approximately ±12mV).
4. For reference, approximately. V DDQ /2 ±12mV.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
119
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
相关PDF资料
PDF描述
IDT71T75802S166BGG IC SRAM 18MBIT 166MHZ 119BGA
HSC31DTES CONN EDGECARD 62POS .100 EYELET
HMC31DTES CONN EDGECARD 62POS .100 EYELET
FMC43DRYN-S734 CONN EDGECARD 86POS DIP .100 SLD
FMC43DRYH-S734 CONN EDGECARD 86POS DIP .100 SLD
相关代理商/技术参数
参数描述