参数资料
型号: MT42L192M32D3LE-3 IT:A
厂商: Micron Technology Inc
文件页数: 127/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 6G(192M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-VFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
Output Characteristics and Operating Conditions
Input Slew Rate
Table 70: Differential Input Slew Rate Definition
Measured 1
Description
From
To
Defined by
Differential input slew rate for rising
V IL,diff,max
V IH,diff,min
[V IH,diff,min - V IL,diff,max
Δ TR diff
edge (CK/CK# and DQS/DQS#)
Differential input slew rate for falling
V IH,diff,min
V IL,diff,max
[V IH,diff,min - V IL,diff,max
Δ TF diff
edge (CK/CK# and DQS/DQS#)
Note:
1. The differential signals (CK/CK# and DQS/DQS#) must be linear between these thresh-
olds.
Figure 88: Differential Input Slew Rate Definition for CK, CK#, DQS, and DQS#
TF diff
TR diff
V IH,diff,min
0
V IL,diff,max
Time
Output Characteristics and Operating Conditions
Table 71: Single-Ended AC and DC Output Levels
Symbol
V OH(AC)
V OL(AC)
V OH(DC)
V OL(DC)
Parameter
AC output HIGH measurement level (for output slew rate)
AC output LOW measurement level (for output slew rate)
DC output HIGH measurement level (for I-V curve linearity)
DC output LOW measurement level (for I-V curve linearity)
Value
V REF + 0.12
V REF - 0.12
0.9 x V DDQ
0.1 x V DDQ
Unit
V
V
V
V
Notes
1
2
I OZ
MMpupd
Output leakage current (DQ, DM, DQS, DQS#); DQ,
DQS, DQS# are disabled; 0V ≤ V OUT ≤ V DDQ
Delta output impedance between pull-up and pull-
down for DQ/DM
MIN
MAX
MIN
MAX
–5
+5
–15
+15
μ A
μ A
%
%
Notes:
1. I OH = –0.1mA.
2. I OL = 0.1mA.
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
127
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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