参数资料
型号: MT42L192M32D3LE-3 IT:A
厂商: Micron Technology Inc
文件页数: 151/164页
文件大小: 0K
描述: IC LPDDR2 SDRAM 8GBIT 168FBGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: 移动 LPDDR2 SDRAM
存储容量: 6G(192M x 32)
速度: 333MHz
接口: 并联
电源电压: 1.14 V ~ 1.3 V
工作温度: -25°C ~ 85°C
封装/外壳: 168-VFBGA
供应商设备封装: 168-FBGA(12x12)
包装: 散装
2Gb: x16, x32 Mobile LPDDR2 SDRAM S4
CA and CS# Setup, Hold, and Derating
Table 90: Derating Values for AC/DC-Based t IS/ t IH (AC300)
Δ t IS, Δ t IH derating in p s
CK, CK# Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
1.6 V/ns
1.4 V/ns
1.2 V/ns
1.0 V/ns
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS
Δ t IH
Δ t IS Δ t IH
CA, CS# slew
2.0
150
100
150
100
150
100
rate V/ns
1.5
100
67
100
67
100
67
116
83
1.0
0
0
0
0
0
0
16
16
32
32
0.9
-4
-8
-4
-8
12
8
28
24
44
40
0.8
-12
-20
4
-4
20
12
36
28
52
48
0.7
0.6
-3
-18
13
2
-2
-21
29
18
14
-5
45
34
34
15
61
50
66
47
0.5
0.4
-12
-32
4
-35
-12
-40
20
-11
20
-8
Note:
1. Shaded cells are not supported.
Table 91: Required Time for Valid Transition – t VAC > V IH(AC) and < V IL(AC)
Slew Rate
(V/ns)
>2.0
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
<0.5
t VAC
Min
75
57
50
38
34
29
22
13
0
0
at 300mV (ps)
Max
t VAC
Min
175
170
167
163
162
161
159
155
150
150
at 220mV (ps)
Max
PDF: 09005aef83f3f2eb
2gb_mobile_lpddr2_s4_g69a.pdf – Rev. N 3/12 EN
151
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2010 Micron Technology, Inc. All rights reserved.
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