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参数资料
| 型号： | MT48V2M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM) |
| 中文描述： | 为512k × 32 × 4银行2.5V的内存电压（2.5V，512K采样× 32 × 4组同步动态RAM）的 |
| 文件页数： | 10/50页 |
| 文件大小： | 1058K |
| 代理商： | MT48V2M32LFFC |
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10
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
COMMAND INHIBIT
The COMMAND INHIBIT function prevents new
commands from being executed by the SDRAM, re-
gardless of whether the CLK signal is enabled. The
SDRAM is effectively deselected. Operations already
in progress are not affected.
NO OPERATION (NOP)
The NO OPERATION (NOP) command is used to
perform a NOP to an SDRAM which is selected (CS# is
LOW). This prevents unwanted commands from being
registered during idle or wait states. Operations already
in progress are not affected.
LOAD MODE REGISTER
The Mode Register is loaded via inputs A0–A12. See
Mode Register heading in the Register Definition sec-
tion. The LOAD MODE REGISTER command can only
be issued when all banks are idle, and a subsequent
executable command cannot be issued until
t
MRD is
met.
A CTIV E
The ACTIVE command is used to open (or activate)
a row in a particular bank for a subsequent access. The
value on the BA0 and BA1 inputs selects the bank, and
the address provided on inputs A0–A10 selects the row.
This row remains active (or open) for accesses until a
PRECHARGE command is issued to that bank. A
PRECHARGE command must be issued before open-
ing a different row in the same bank.
REA D
The READ command is used to initiate a burst read
access to an active row. The value on the BA0 and BA1
(B1) inputs selects the bank, and the address provided
on inputs A0–A7 selects the starting column location.
The value on input A10 determines whether or not auto
precharge is used. If auto precharge is selected, the row
being accessed will be precharged at the end of the
READ burst; if auto precharge is not selected, the row
will remain open for subsequent accesses. Read data
appears on the DQs subject to the logic level on the
DQM inputs two clocks earlier. If a given DQMx signal
was registered HIGH, the corresponding DQs will be
High-Z two clocks later; if the DQMx signal was regis-
tered LOW, the corresponding DQs will provide valid
data. DQM0 corresponds to DQ0–DQ7, DQM1 corre-
sponds to DQ8–DQ15, DQM2 corresponds to DQ16–
DQ23 and DQM3 corresponds to DQ24–DQ31.
WRITE
The WRITE command is used to initiate a burst write
access to an active row. The value on the BA0 and BA1
inputs selects the bank, and the address provided on
inputs A0–A7 selects the starting column location. The
value on input A10 determines whether or not auto
precharge is used. If auto precharge is selected, the row
being accessed will be precharged at the end of the
WRITE burst; if auto precharge is not selected, the row
will remain open for subsequent accesses. Input data
appearing on the DQs is written to the memory array
subject to the DQM input logic level appearing coinci-
dent with the data. If a given DQM signal is registered
LOW, the corresponding data will be written to memory;
if the DQM signal is registered HIGH, the correspond-
ing data inputs will be ignored, and a WRITE will not be
executed to that byte/column location.
PRECHA RGE
The PRECHARGE command is used to deactivate
the open row in a particular bank or the open row in all
banks. The bank(s) will be available for a subsequent
row access a specified time (
t
RP) after the PRECHARGE
command is issued. Input A10 determines whether
one or all banks are to be precharged, and in the case
where only one bank is to be precharged, inputs BA0
and BA1 select the bank. Otherwise BA0 and BA1 are
treated as “Don’t Care.” Once a bank has been
precharged, it is in the idle state and must be activated
prior to any READ or WRITE commands being issued to
that bank.
AUTO PRECHARGE
Auto precharge is a feature which performs the
same individual-bank PRECHARGE function de-
scribed above, without requiring an explicit command.
This is accomplished by using A10 to enable auto
precharge in conjunction with a specific READ or WRITE
command. A PRECHARGE of the bank/row that is ad-
dressed with the READ or WRITE command is auto-
matically performed upon completion of the READ or
WRITE burst, except in the full-page burst mode, where
auto precharge does not apply. auto precharge is non-
persistent in that it is either enabled or disabled for
each individual READ or WRITE command.
Auto precharge ensures that the precharge is initi-
ated at the earliest valid stage within a burst. The user
must not issue another command to the same bank
until the precharge time (
t
RP) is completed. This is
determined as if an explicit PRECHARGE command
was issued at the earliest possible time, as described
for each burst type in the Operation section of this data
sheet.
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