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参数资料
| 型号： | MT48V2M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM) |
| 中文描述： | 为512k × 32 × 4银行2.5V的内存电压（2.5V，512K采样× 32 × 4组同步动态RAM）的 |
| 文件页数： | 5/50页 |
| 文件大小： | 1058K |
| 代理商： | MT48V2M32LFFC |
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5
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
BALL DESCRIPTIONS
BALL OUT
I1
SY MBOL
CLK
TY PE
Input
DESCRIPTION
Clock: CLK is driven by the system clock. All SDRAM input signals are sampled
on the positive edge of CLK. CLK also increments the internal burst counter
and controls the output registers.
Clock Enable: CKE activates (HIGH) and deactivates (LOW) the CLK signal.
Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH
operation (all banks idle), ACTIVE POWER-DOWN (row active in any bank) or
CLOCK SUSPEND operation (burst/access in progress). CKE is synchronous except
after the device enters power-down and self refresh modes, where CKE
becomes asynchronous until after exiting the same mode. The input buffers,
including CLK, are disabled during power-down and self refresh modes,
providing low standby power. CKE may be tied HIGH.
Chip Select: CS# enables (registered LOW) and disables (registered HIGH) the
command decoder. All commands are masked when CS# is registered HIGH. CS#
provides for external bank selection on systems with multiple banks. CS# is
considered part of the command code.
Command Inputs: RAS#, CAS#, and WE# (along with CS#) define the
command being entered.
Input/Output Mask: DQM is sampled HIGH and is an input mask signal for write
accesses and an output enable signal for read accesses. Input data is masked
during a WRITE cycle. The output buffers are placed in a High-Z state (two-
clock latency) when during a READ cycle. DQM0 corresponds to DQ0–DQ7,
DQM1 corresponds to DQ8–DQ15, DQM2 corresponds to DQ16–DQ23 and DQM3
corresponds to DQ24–DQ31. DQM0–3 are considered same state when
referenced as DQM.
Bank Address Input(s): BA0 and BA1 define to which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied. These pins also provide the
op-code during a LOAD MODE REGISTER command.
Address Inputs: A0–A10 are sampled during the ACTIVE command (row-
address A0–A10) and READ/WRITE command (column-address A0–A7; with A10
defining auto precharge) to select one location out of the memory array in the
respective bank. A10 is sampled during a PRECHARGE command to determine if
all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW).
The address inputs also provide the op-code during a LOAD MODE REGISTER
command.
Data Input/Output: Data bus
I2
CKE
Input
I8
CS#
Input
I9, J7, J8
RAS#, CAS#
WE#
DQM0–3
Input
J9, J1, F8, F2
Input
I7, H8
BA0, BA1
Input
G8, G9, F7, F3, G1, G2,
G3, H1, H2, I3, G7
A0–A10
Input
O8, M7, O9, M8, N9, L8,
L7, K8, K2, L3, L2, N1, M2,
O1, M3, O2, E8, D7, D8,
B9, C8, A9, C7, A8, A2, C3,
A1, C2, B1, D2, D3, E2
E3, E7, H3, J2, J3
DQ0–DQ31
I/O
NC
–
No Connect: These pins should be left unconnected.
Pin 70 is reserved for SSTL reference voltage supply.
DQ Power: Provide isolated power to DQs for improved noise immunity.
B2, B7, C9, D9, E1, K1,
L9, M9, N2, N7
B8, B3, C1, D1, E9,
K9, M1, N8
A7, F9, K7, O7
A3, K3, F1, L1, O3
V
DD
Q
Supply
V
SS
Q
Supply
DQ Ground: Provide isolated ground to DQs for improved noise immunity.
V
DD
V
SS
Supply
Supply
Power Supply: 2.5V ±0.2V.
Ground.
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