参数资料
型号: MT48V2M32LFFC
厂商: Micron Technology, Inc.
英文描述: 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM)
中文描述: 为512k × 32 × 4银行2.5V的内存电压(2.5V,512K采样× 32 × 4组同步动态RAM)的
文件页数: 18/50页
文件大小: 1058K
代理商: MT48V2M32LFFC
18
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
In the case of a fixed-length burst being executed to
completion, a PRECHARGE command issued at the
optimum time (as described above) provides the same
operation that would result from the same fixed-length
burst with auto precharge. The disadvantage of the
PRECHARGE command is that it requires that the com-
mand and address buses be available at the appropri-
ate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to trun-
cate fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the
BURST TERMINATE command, and fixed-length READ
bursts may be truncated with a BURST TERMINATE
command, provided that auto precharge was not acti-
vated. The BURST TERMINATE command should be
issued
x
cycles before the clock edge at which the last
desired data element is valid, where
x
equals the CAS
latency minus one. This is shown in Figure 12 for each
possible CAS latency; data element
n
+ 3 is the last
desired data element of a longer burst.
DON’T CARE
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
BURST
TERMINATE
NOP
T7
NOTE:
DQM is LOW.
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
BURST
TERMINATE
NOP
CLK
DQ
D
OUT
n
T2
T1
T4
T3
T6
T5
T0
COMMAND
ADDRESS
READ
NOP
NOP
NOP
BANK,
COL
n
NOP
D
OUT
n
+ 1
D
OUT
n
+ 2
D
OUT
n
+ 3
BURST
TERMINATE
NOP
X
= 0 cycles
CAS Latency = 1
X
= 1 cycle
CAS Latency = 2
CAS Latency = 3
X
= 2 cycles
Figure 12
Terminating A READ Burst
相关PDF资料
PDF描述
MT48V4M32LFFC SYNCHRONOUS DRAM
MT49H16M16 THERMISTOR PTC 100OHM 110DEG RAD
MT49H16M16FM REDUCED LATENCY DRAM RLDRAM
MT49H8M32 THERMISTOR PTC 100OHM 120DEG RAD
MT49H8M32FM REDUCED LATENCY DRAM RLDRAM
相关代理商/技术参数
参数描述
MT48V32M16S2FG-10 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays
MT48V32M16S2FG-8 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk