- 您现在的位置：买卖IC网 > PDF目录385639 > MT48V2M32LFFC (Micron Technology, Inc.) 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM) PDF资料下载
参数资料
| 型号： | MT48V2M32LFFC |
| 厂商： | Micron Technology, Inc. |
| 英文描述： | 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM) |
| 中文描述： | 为512k × 32 × 4银行2.5V的内存电压（2.5V，512K采样× 32 × 4组同步动态RAM）的 |
| 文件页数： | 26/50页 |
| 文件大小： | 1058K |
| 代理商： | MT48V2M32LFFC |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页
26
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
TRUTH TABLE 3 – CURRENT STATE BANK
n
- COMMAND TO BANK
n
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE
Any
CS# RAS# CAS# WE#
H
X
L
H
L
L
L
L
L
L
L
L
L
H
L
H
L
L
L
H
L
H
L
L
L
H
L
H
L
H
L
L
L
H
COMMAND (ACTION)
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
ACTIVE (Select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
PRECHARGE
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Deactivate row in bank or banks)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE (Truncate WRITE burst, start PRECHARGE)
BURST TERMINATE
NOTES
X
H
H
L
L
H
L
L
H
L
L
H
H
L
L
H
H
X
H
H
H
L
L
H
L
L
H
L
L
L
H
L
L
L
Idle
7
7
11
10
10
8
10
10
8
9
10
10
8
9
Row Active
Read
(Auto-
Precharge
Disabled)
Write
(Auto-
Precharge
Disabled)
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSR has been
met (if the previous state was self refresh).
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown
are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data bursts/accesses and no
register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or
been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or
been terminated.
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP
commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states.
Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to Truth
Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when
t
RP is met. Once
t
RP is met,
the bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD is met. Once
t
RCD is met,
the bank will be in the row active state.
Read w/Auto-
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when
t
RP has
been met. Once
t
RP is met, the bank will be in the idle state.
Write w/Auto-
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when
t
RP
has been met. Once
t
RP is met, the bank will be in the idle state.
相关PDF资料 |
PDF描述 |
|---|---|
| MT48V4M32LFFC | SYNCHRONOUS DRAM |
| MT49H16M16 | THERMISTOR PTC 100OHM 110DEG RAD |
| MT49H16M16FM | REDUCED LATENCY DRAM RLDRAM |
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MT48V32M16S2FG-10 | 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays |
| MT48V32M16S2FG-8 ES | 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk |
发布紧急采购，3分钟左右您将得到回复。