参数资料
型号: MT48V2M32LFFC
厂商: Micron Technology, Inc.
英文描述: 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4组同步动态RAM)
中文描述: 为512k × 32 × 4银行2.5V的内存电压(2.5V,512K采样× 32 × 4组同步动态RAM)的
文件页数: 31/50页
文件大小: 1058K
代理商: MT48V2M32LFFC
31
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
I
DD
6
- SELF REFRESH CURRENT OPTIONS
(Notes: 1, 6, 11, 13; notes appear on page 34) V
DD
= 2.5V ±0.2V/ V
DD
Q = 2.5V/1.8V ±0.15V
DENSITY
SELF REFRESH
OSC. LEVEL
2
1
3
-8
-10
UNITS
NOTES
64Mb
350
350
μA
mA
μA
4
4
4
0.6 - 1.0
100 - 240
0.6 - 1.0
100 - 240
I
DD
SPECIFICATIONS AND CONDITIONS
(Notes: 1, 6, 11, 13; notes appear on page 34) V
DD
= 2.5V ±0.2V/ V
DD
Q = 2.5V/1.8V ±0.15V
PA RA METER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
CL = 3;
t
CK = 10ns (8ns for -8)
STANDBY CURRENT: Power-Down Mode;
t
CK = 10ns (8ns for -8) All banks idle; CKE = LOW, CKE
0.2
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All banks active after
t
RCD met;
No accesses in progress;
t
CK = 10ns (8ns for -8)
OPERATING CURRENT: Burst Mode; Continuous burst;
READ or WRITE; All banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
t
CK = 10ns (8ns for -8)
SELF REFRESH CURRENT: CKE
0.2
SY MBOL
I
DD
1
-8
100
-10
95
UNITS NOTES
mA
3, 18,
19
I
DD
2
350
350
μA
I
DD
3
35
30
mA
3, 12,
19
I
DD
4
80
70
mA
3, 18,
19
3, 12,
18, 19
t
RC =
t
RC (MIN)
I
DD
5
150
140
mA
Standard
I
DD
6
350
350
μA
4
MAX
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