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参数资料
| 型号： | NAND01GR3B2CN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 18/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GR3B2CN6F |
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NAND01G-B2C
Device operations
25/65
Figure 9.
Cache read operation
6.3
Page program
The page program operation is the standard operation to program data to the memory array.
Within a given block, the pages must be programmed sequentially. Random page address
programming is not recommended.
The memory array is programmed by page, however partial page programming is allowed
where any number of bytes (1 to 2112) or words (1 to 1056) can be programmed.
The maximum number of consecutive partial page program operations allowed in the same
page is four. After exceeding this a Block Erase command must be issued before any further
program operations can take place in that page.
6.3.1
Sequential input
To input data sequentially the addresses must be sequential and remain in one block.
For sequential input each page program operation consists of five steps (see Figure 10):
1.
one bus cycle is required to setup the Page Program (sequential input) command (see
2.
four bus cycles are then required to input the program address (refer to Table 6 and
3.
the data is then loaded into the data registers
4.
one bus cycle is required to issue the Page Program Confirm command to start the
P/E/R controller. The P/E/R will only start if the data has been loaded in step 3
5.
the P/E/R controller then programs the data into the array.
I/O
R/B
ai14293
30h
00h
D0
tBLBHx
R
tBLBH1
C1
C2
R1
R2
31h
Random
tBLBHx
...
Dn
31h
D0
Sequential
AL
W
CL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND01GR3B2CZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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