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参数资料
| 型号： | NAND01GR3B2CN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 31/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GR3B2CN6F |
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NAND01G-B2C
Device operations
37/65
M
e
mo
ry
or
g
a
nizati
on
b
lo
c
k
80-83
M
Number of data bytes per page
84-85
M
Number of spare bytes per page
86-89
M
Number of data bytes per partial page
90-91
M
Number of spare bytes per partial page
92-95
M
Number of pages per block
96-99
M
Number of blocks per logical unit (LUN)
100
M
Number of logical units (LUNs)
101
M
Number of address cycles
Bit 4 to bit 7
Column address cycles
Bit 0 to bit 3
Row address cycles
102
M
Number of bits per cell
103-104
M
Bad blocks maximum per LUN
105-106
M
Block endurance
107
M
Guaranteed valid blocks at beginning of
target
108-109
M
Block endurance for guaranteed valid
blocks
110
M
Number of programs per page
111
M
Partial programming attributes
Bit 5 to bit 7
Reserved
4
1 = partial page layout is partial page
data followed by partial page spare
Bit 1 to bit 3
Reserved
0
1 = partial page programming has
constraints
112
M
Number of bits ECC correctability
113
M
Number of interleaved address bits
Bit 4 to bit 7
Reserved (0)
Bit 0 to bit 3
Number of interleaved address bits
114
O
Interleaved operation attributes
Bit 4 to bit 7
Reserved (0)
Bit 3
Address restrictions for program cache
Bit 2
1 = program cache supported
Bit 1
1 = no block address restrictions
Bit 0
Overlapped / concurrent interleaving
support
115-127
Reserved (0)
Table 16.
Parameter page data structure (continued)
Byte
O/M(1)
Description
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PDF描述 |
|---|---|
| NAND01GR3B3BV1T | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GR3B3CV6 | 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48 |
| NAND01GW3B2AN6F | 128M X 8 FLASH 3V PROM, 25000 ns, PDSO48 |
| NAND08GW3B2CZC1 | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND01GR3B2CZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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