参数资料
型号: NAND01GR3B2CN6F
厂商: NUMONYX
元件分类: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 5/65页
文件大小: 1473K
代理商: NAND01GR3B2CN6F
NAND01G-B2C
Memory array organization
13/65
Figure 5.
Memory array organization
AI09854
Block = 64 pages
Page = 2112 bytes (2048 + 64)
2,048 bytes
2048 bytes
Spare
area
64
bytes
Block
8 bits
64
bytes
8 bits
Page
Page buffer, 2112 bytes
Block = 64 pages
Page = 1056 words (1024 + 32)
1,024 words
1024 words
Spare
area
Main area
32
words
16 bits
32
words
16 bits
Page buffer, 1056 words
Block
Page
x8 DEVICES
x16 DEVICES
Main area
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PDF描述
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相关代理商/技术参数
参数描述
NAND01GR3B2CWFD 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film
NAND01GR3B2CZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR3B2CZA1E 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA1F 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
NAND01GR3B2CZA6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory