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参数资料
| 型号： | NAND01GR3B2CN6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 46/65页 |
| 文件大小： | 1473K |
| 代理商： | NAND01GR3B2CN6F |
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DC and AC parameters
NAND01G-B2C
Table 25.
AC characteristics for operations(1)
Symbol
Alt.
symbol
Parameter
1.8 V
devices
3 V
devices
Unit
tALLRL1
tAR
Address Latch Low to
Read Enable Low
Read electronic signature
Min
10
ns
tALLRL2
Read cycle
Min
10
ns
tBHRL
tRR
Ready/Busy High to Read Enable Low
Min
20
ns
tBLBHx
Busy time during cache read
Typ
3
s
Max
25
s
tBLBH1
Ready/Busy Low to
Ready/Busy High
Read busy time
Max
25
s
tBLBH2
tPROG
Program busy time
Max
700
s
tBLBH3
tBERS
Erase busy time
Max
3
ms
tBLBH4
tRST
Reset busy time, during ready
Max
5
s
Reset busy time, during read
Max
5
s
Reset busy time, during program
Max
10
s
Reset busy time, during erase
Max
500
s
tCLLRL
tCLR
Command Latch Low to Read Enable Low
Min
10
ns
tDZRL
tIR
Data Hi-Z to Read Enable Low
Min
0
ns
tEHQZ
tCHZ
Chip Enable High to Output Hi-Z
Max
30
ns
tRHQZ
tRHZ
Read Enable High to Output Hi-z
Max
100
ns
tWHWH
tADL
(2)
Last address latched to data loading time during program
operations
Min
100
70
ns
tVHWH
tVLWH
tWW
(3)
Write protection time
Min
100
ns
tELQV
tCEA
Chip Enable Low to Output Valid
Max
45
25
ns
tRHRL
tREH
Read Enable High to
Read Enable Low
Read Enable High hold time
Min
15
10
ns
tEHQX
tOH
Chip Enable High or Read Enable High to Output Hold
Min
15
ns
tRHQX
(4)
tRLQX
tRLOH
Read Enable Low to Output Hold
5
ns
tRLRH
tRP
Read Enable Low to
Read Enable High
Read Enable pulse width
Min
25
12
ns
tRLRL
tRC
Read Enable Low to
Read Enable Low
Read cycle time
Min
45
25
ns
tRLQV
tREA
Read Enable Low to
Output Valid
Read Enable access time
Max
30
20
ns
Read ES access time(5)
tWHBH
tR
Write Enable High to
Ready/Busy High
Read busy time
Max
25
s
tWHBL
tWB
Write Enable High to Ready/Busy Low
Max
100
ns
tWHRL
tWHR
Write Enable High to Read Enable Low
Min
60
ns
tEHALX
tCSD
Chip Enable High to Address Latch or Command Latch
don’t care
Min
10
ns
tEHCLX
tRHWL
tRHW
Read Enable High to Write Enable Low
Min
100
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR3B2CWFD | 制造商:Micron Technology Inc 功能描述:NAND - Gel-pak, waffle pack, wafer, diced wafer on film |
| NAND01GR3B2CZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR3B2CZA1E | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA1F | 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory |
| NAND01GR3B2CZA6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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