参数资料
型号: NAND01GR3B2CN6F
厂商: NUMONYX
元件分类: PROM
英文描述: 128M X 8 FLASH 1.8V PROM, 25000 ns, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 30/65页
文件大小: 1473K
代理商: NAND01GR3B2CN6F
Device operations
NAND01G-B2C
Table 16.
Parameter page data structure
Byte
O/M(1)
Description
Re
vision
inf
o
rma
tion
and
f
e
a
ture
s
b
loc
k
0-3
M
Parameter page signature
– Byte 0: 4Fh, ‘O’
– Byte 1: 4Eh, ‘N’
– Byte 2: 46h, ‘F’
– Byte 3: 49h, ‘I’
4-5
M
Revision number
Bit 2 to bit 15
Reserved (0)
Bit 1
1 = supports ONFI version 1.0
Bit 0
Reserved (0)
6-7
M
Features supported
Bit 5 to bit 15
Reserved (0)
Bit 4
1 = supports odd to even page copy
back
Bit 3
1 = supports interleaved operations
Bit 2
1 = supports non-sequential page
programming
Bit 1
1 = supports multiple LUN operations
Bit 0
1 = supports 16-bit data bus width
8-9
M
Optional commands supported
Bit 6 to bit 15
Reserved (0)
Bit 5
1 = supports read unique ID
Bit 4
1 = supports copy back
Bit 3
1 = supports read status enhanced
Bit 2
1 = supports get features and set
features
Bit 1
1 = supports read cache commands
Bit 0
1 = supports page cache program
command
10-31
Reserved (0)
Man
u
facturer
in
fo
rmat
ion
b
loc
k
32-43
M
Device manufacturer (12 ASCII characters)
44-63
M
Device model (20 ASCII characters)
64
M
JEDEC manufacturer ID
65-66
O
Date code
67-79
Reserved (0)
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NAND01GR3B3BV1T 128M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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