NT5SV8M16DS / NT5SV8M16DT
NT5SE8M16DS / NT5SE8M16DT
128Mb Synchronous DRAM
REV 1.0
May 9, 2005
34
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Power Supply Voltage
-0.3 to +4.6
V
VDDQ
Power Supply Voltage for Output
-0.3 to +4.6
V
VIN
Input Voltage
-0.3 to VDD+0.3
V
VOUT
Output Voltage
-0.3 to VDD+0.3
V
TA
Operating Temperature (ambient)
0 to +70
TSTG
Storage Temperature
-55 to +125
PD
Power Dissipation
1.0
W
IOUT
Short Circuit Output Current
50
mA
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-
ing only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Recommended DC Operating Conditions (TA = 0°C to 70°C)
Symbol
Parameter
Rating
Units
Notes
Min.
Typ.
Max.
VDD
Supply Voltage
3.0
3.3
3.6
V
VDDQ
Supply Voltage for Output
3.0
3.3
3.6
V
VIH
Input High Voltage
2.0
—
VDD + 0.3
V
VIL
Input Low Voltage
-0.3
—
0.8
V
1. All voltages referenced to VSS and VSSQ.
2. VIH (max) = VDD + 2.3V for pulse width ≤ 3ns.
3. VIL (min) = VSS - 2.0V for pulse width ≤ 3ns.
Capacitance (TA = 25°C, f = 1MHz, VDD = 3.3V ± 0.3V)
Symbol
Parameter
Min.
Typ
Max.
Units
Notes
CI
Input Capacitance (A0-A11, BA0, BA1, CS, RAS, CAS, WE, CKE, DQM)
2.5
3.0
3.8
pF
Input Capacitance (CK)
2.5
2.8
3.5
pF
CO
Output Capacitance (DQ0 - DQ15)
4.0
4.5
6.5
pF