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参数资料
| 型号： | NT5SE8M16DS-6K |
| 厂商： | NANYA TECHNOLOGY CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| 封装： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 |
| 文件页数： | 6/64页 |
| 文件大小： | 1153K |
| 代理商： | NT5SE8M16DS-6K |
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NT5SV8M16DS / NT5SV8M16DT
NT5SE8M16DS / NT5SE8M16DT
128Mb Synchronous DRAM
REV 1.0
May 9, 2005
14
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Burst Write Command
The Burst Write command is initiated by having CS, CAS, and WE low while holding RAS high at the rising edge of the clock.
The address inputs determine the starting column address. There is no CAS latency required for burst write cycles. Data for the
first burst write cycle must be applied on the DQ pins on the same clock cycle that the Write Command is issued. The remaining
data inputs must be supplied on each subsequent rising clock edge until the burst length is completed. When the burst has fin-
ished, any additional data supplied to the DQ pins will be ignored.
Write Interrupted by a Write
A burst write may be interrupted before completion of the burst by another Write Command. When the previous burst is inter-
rupted, the remaining addresses are overridden by the new address and data will be written into the device until the pro-
grammed burst length is satisfied.
Burst Write Operation
Write Interrupted by a Write
COMMAND
NOP
WRITE A
NOP
DQs
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is masked.
The first data element and the Write
are registered on the same clock edge.
(Burst Length = 4, CAS latency = 2, 3)
: “H” or “L”
COMMAND
NOP
WRITE A
WRITE B
NOP
DQs
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 CK Interval
(Burst Length = 4, CAS latency = 2, 3)
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相关代理商/技术参数 |
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| NT5SV16M16AT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-75B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-75BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-7K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-7KL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
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