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参数资料
| 型号： | NT5SE8M16DS-6K |
| 厂商： | NANYA TECHNOLOGY CORP |
| 元件分类： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| 封装： | 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54 |
| 文件页数： | 61/64页 |
| 文件大小： | 1153K |
| 代理商： | NT5SE8M16DS-6K |
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NT5SV8M16DS / NT5SV8M16DT
NT5SE8M16DS / NT5SE8M16DT
128Mb Synchronous DRAM
REV 1.0
May 9, 2005
64
NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Please visit our home page for more information: www.nanya.com
Nanya Technology Corporation
Hwa Ya Technology Park 669
Fu Hsing 3rd Rd., Kueishan,
Taoyuan, 333, Taiwan, R.O.C.
Tel: +886-3-328-1688
Nanya reserves the right to make changes or deletions without any notice to any of its products. Nanya makes no guarantee, warranty or representation regarding
the suitability of its products for any particular purpose. Nanya assumes no liability arising out of the application or use of its products. All parameters can and do
vary in its application and must be validated for each customer application by the customerís technician. By purchasing Nanya products, Nanya does not convey
any license under its patent rights not the rights of others. Nanya products are not designed or intended or authorized for use in systems intended for the military or
surgical implants or any other applications where life is involved or where injury or death may occur or the loss/corruption of data or the loss of system reliability or
mission critical applications. Should the buyer purchase or use Nanya products in such unintended or unauthorized application, the Buyer and user shall indemnify
and hold Nanya and its officers, employees, subsidiaries, affiliates and distributors harmless against all claims, costs, damages, all fees and expenses directly or
indirectly arising from any claim of loss, injury or death associated with unintended or unauthorized use even if such claims alleges Nanya was negligent regarding
design or manufacture of the part. Nanya and the Nanya logo are trademarks of the Nanya Technology Corporation.
2004 Nanya Technology Corporation
All rights reserved.
Printed in Taiwan
Revision Log
Revision
Date
Modification
0.1
Jun 9, 2004
Draft release.
0.2
Aug 3, 2004
2.5V part added, full page burst support
1.0
May 9, 2005
P2; ordering infromation. Remove BGA portion & update currents specs.
P37; DC characteristics, added all parameters spec.
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| NT5SV8M8DT-7 | 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NT5SV16M16AT | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-75B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-75BL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-7K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
| NT5SV16M16AT-7KL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Synchronous DRAM |
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